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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6230-6232

Enhanced performance of ZnO nanowire field effect transistors by H 2 annealing

(6) Keem, Kihyun a Kang, Jeongmin a Yoon, Changjoon a Jeong, Dong Young a Moon, Byung Moo a Kim, Sangsig a

a Korea University (South Korea)

Author keywords

Annealing; Field effect transistors; Hydrogen; Nanowire

Indexed keywords

ANNEALING; ELECTRON TRAPS; HYDROGEN; NANOWIRES; PHOTOLITHOGRAPHY; SURFACE CHARGE; TRANSCONDUCTANCE; ZINC OXIDE;

ELECTRICAL CHARACTERISTICS; FIELD EFFECT MOBILITY; SURFACE STATES;

FIELD EFFECT TRANSISTORS;

EID: 34648827588 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.6230 Document Type: Article

Times cited : (19)

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