Characteristics of heavily doped p+ / n ultrashallow junction prepared by plasma doping and laser annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 257-261

  Baek, Sungkweon ^a   Heo, Sungho ^a   Choi, Haejung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; LASER APPLICATIONS; PLASMAS; POSITIVE IONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

JUNCTION DEPTH; LASER ANNEALING; PLASMA DOPING;

SEMICONDUCTOR JUNCTIONS;

EID: 31144436257     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1852465     Document Type: Article

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