Ultra-shallow junction formation using flash annealing and advanced doping techniques

IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Volumn , Issue , 2008, Pages 82-86

  Gelpey, J ^a   McCoy, S ^a   Kontos, A ^b   Godet, L ^b   Hatem, C ^b   Camm, D ^a   Chan, J ^a   Papasouliotis, G ^b   Scheuer, J ^b  

^a Mattson Technology Canada Inc   (Canada)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ELECTRIC RESISTANCE; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTOR DOPING;

ANNEALING METHODS; DOPING TECHNIQUES; ELECTRICAL ACTIVATION; FLASH ANNEALING; JUNCTION FORMATION;

ANNEALING;

EID: 50849133253     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2008.4540023     Document Type: Conference Paper

References (9)

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