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Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 3851-3879

First-principles calculations for defects and impurities: Applications to III-nitrides

(2) Van De Walle, Chris G a Neugebauer, Jörg b

a PALO ALTO RESEARCH CENTER (United States)

b UNIVERSITY OF PADERBORN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATES; IONIZATION ENERGY; MIGRATION PATH; WIDE-BAND-GAP SEMICONDUCTORS;

ALGORITHMS; BINDING ENERGY; COMPUTATIONAL METHODS; DEFECTS; DOPING (ADDITIVES); FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IMPURITIES; IONIZATION; LIGHT EMISSION; LUMINESCENCE; OPTOELECTRONIC DEVICES; PROBLEM SOLVING; THERMAL EFFECTS; THERMODYNAMICS;

NITRIDES;

EID: 2342456342 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1682673 Document Type: Review

Times cited : (2904)

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