SCOPUS 정보 검색 플랫폼

Volumn 89, Issue 15, 2006, Pages

Influence of surface adsorption in improving ultrashallow junction formation

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NITROGEN; DOPANTS; SILICON DEVICES; SURFACE ADSORPTION;

ADSORPTION; ARSENIC; INTEGRATED CIRCUITS; SURFACE PROPERTIES; TRANSISTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 33749986002 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2360917 Document Type: Article

Times cited : (12)

References (12)

1
- 33750015554
- The International Technology Roadmafor Semiconductors
- The International Technology Roadmap for Semiconductors, 2005, http://www.itrs.net/Links/2005ITRS/Home2005.htm
- (2005)

2
- 0032308664
- M. A. Foad and D. J. Dean, Solid State Technol. 41, 43 (1998).
- (1998) Solid State Technol. , vol.41 , pp. 43
- Foad, M.A.¹ Dean, D.J.²

3
- 0001633650
- D. F. Downey, J. W. Chow, E. Ishida, and K. S. Jones, Appl. Phys. Lett. 73, 1263 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1263
- Downey, D.F.¹ Chow, J.W.² Ishida, E.³ Jones, K.S.⁴

4
- 0001715621
- M. S. Carroll, C.-L. Chang, J. C. Sturm, and T. Buyuklimanli, Appl. Phys. Lett. 73, 3695 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3695
- Carroll, M.S.¹ Chang, C.-L.² Sturm, J.C.³ Buyuklimanli, T.⁴

5
- 23444459560
- H. Graoui, M. Hilkene, B. McComb, M. Castle, S. Felch, A. Al-Bayati, A. Tjandra, and M. A. Foad, Nucl. Instrum. Methods Phys. Res. B 237, 46 (2005).
- (2005) Nucl. Instrum. Methods Phys. Res. B , vol.237 , pp. 46
- Graoui, H.¹ Hilkene, M.² McComb, B.³ Castle, M.⁴ Felch, S.⁵ Al-Bayati, A.⁶ Tjandra, A.⁷ Foad, M.A.⁸

6
- 0345148841
- W. Lerch, M. Gluck, N. A. Stolwijk, H. Walk, M. Schafer, S. D. Marcus, D. F. Downey, and J. W. Chow, J. Electrochem. Soc. 146, 2670 (1999).
- (1999) J. Electrochem. Soc. , vol.146 , pp. 2670
- Lerch, W.¹ Gluck, M.² Stolwijk, N.A.³ Walk, H.⁴ Schafer, M.⁵ Marcus, S.D.⁶ Downey, D.F.⁷ Chow, J.W.⁸

7
- 10644269337
- S. G. Tavakoli, B. Sungkweon, and H. Hyunsang, Mater. Sci. Eng., B 114-115, 376 (2004).
- (2004) Mater. Sci. Eng., B , vol.114-115 , pp. 376
- Tavakoli, S.G.¹ Sungkweon, B.² Hyunsang, H.³

8
- 0037279336
- S. Rangan, M. Horn, S. Ashok, and Y. N. Mohapatra, J. Vac. Sci. Technol. B 21, 781 (2003).
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 781
- Rangan, S.¹ Horn, M.² Ashok, S.³ Mohapatra, Y.N.⁴

9
- 0242577291
- R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross, S. McCoy, J. Gelpey, K. Elliott, X. Pages, A. Satta, A. Lauwers, P. Stolk, and K. Maex, Mater. Res. Soc. Symp. Proc. 765, 261 (2003).
- (2003) Mater. Res. Soc. Symp. Proc. , vol.765 , pp. 261
- Lindsay, R.¹ Pawlak, B.² Kittl, J.³ Henson, K.⁴ Torregiani, C.⁵ Giangrandi, S.⁶ Surdeanu, R.⁷ Vandervorst, W.⁸ Mayur, A.⁹ Ross, J.¹⁰ McCoy, S.¹¹ Gelpey, J.¹² Elliott, K.¹³ Pages, X.¹⁴ Satta, A.¹⁵ Lauwers, A.¹⁶ Stolk, P.¹⁷ Maex, K.¹⁸

10
- 33746929089
- E. G. Seebauer, K. Dev, M. Y. L. Jung, R. Vaidyanathan, C. T. M. Kwok, J. W. Ager, E. E. Haller, and R. D. Braatz, Phys. Rev. Lett. 97, 055053 (2006).
- (2006) Phys. Rev. Lett. , vol.97 , pp. 055053
- Seebauer, E.G.¹ Dev, K.² Jung, M.Y.L.³ Vaidyanathan, R.⁴ Kwok, C.T.M.⁵ Ager, J.W.⁶ Haller, E.E.⁷ Braatz, R.D.⁸

11
- 33750031813
- A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. E. Erokhin, Appl. Phys. Lett. 71, 24 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 24
- Agarwal, A.¹ Gossmann, H.-J.² Eaglesham, D.J.³ Pelaz, L.⁴ Jacobson, D.C.⁵ Haynes, T.E.⁶ Erokhin, Y.E.⁷

12
- 4644313043
- T. A. Kirichenko, S. Banerjee, and G. S. Hwang, Phys. Status Solidi B 241, 2303 (2004).
- (2004) Phys. Status Solidi B , vol.241 , pp. 2303
- Kirichenko, T.A.¹ Banerjee, S.² Hwang, G.S.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.