A better approach to molecular implantation

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 107-112

  Renau, A ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; ION SOURCES; TECHNICAL PRESENTATIONS;

BORON IMPLANTS; CARBORANE; DEVICE PERFORMANCES; ELECTRICAL DATUMS; ENERGY CONTAMINATIONS; HIGH CURRENTS; HIGH PRODUCTIVITIES; LOGIC APPLICATIONS; NEW APPROACHES; PROCESS DATUMS;

BORON;

EID: 47649091917     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279960     Document Type: Conference Paper

References (8)

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2. + poly-Si gate", Proc. 16th Int. Conf. on Ion Implantation Tech. (2006) 25-28
3. A. Renau and J. Scheuer, "Comparison of plasma doping and beam line technologies for low energy ion implantation", Proc. 14th Int. Conf. on Ion Implantation Tech. (2002) p. 151
4. T. Nagayama, "Implantation characteristics of boron cluster ions", Proc. 16th Int. Conf. on Ion Implantation Tech. (2006) 186-189
5. A. Perel et al, "Decaborane ion implantation", Proc. 13th Int. Conf. on Ion Implantation Tech. (2000) 304-307
6. R. Grimes, "Boron clusters come of age", Journal of Chemical Education, 81 (2004) 657
7. D. Jacobson et al, "Ultra-high resolution mass spectroscopy of boron cluster ions", Nucl. Instr. & Meth. in Phys. B 237 (2005) 406-410
8. H.J. Gossman "Junction Formation & its device impact through the nodes: From single- to co-implants, from beam-line to plasma, from single ions to clusters, from RTA to LTP", Proc. Int. Workshop on Semiconductor Device Fabrication, Metrology and Modeling (INSIGHT-2007), in press