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Volumn 3, Issue 2, 2003, Pages 149-152

High performance silicon nanowire field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE; SILICON;

EID: 0038161696     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl025875l     Document Type: Article
Times cited : (2071)

References (22)
  • 18
    • 0141657597 scopus 로고    scopus 로고
    • note
    • 2) followed by reaction in (a) the pyridine solution with 0.5 mg/mL (dimethylamino)pyridine (Aldrich) and 1 mg/mL 4-nitrophenyl octadecanoate (or 4-nitrophenyl hexanoate, Aldrich) for 6 h, or (b) 1 M tetraethylammonium bromide (Aldrich) aqueous solution for 30 min. The devices were then rinsed and dried with nitrogen gas.
  • 22
    • 0141657608 scopus 로고    scopus 로고
    • note
    • 1 and the current per unit width using a NW diameter 20 nm. Calculations do not account for interface trap states, and thus it should be possible to increase the transconductance further.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.