Semiconductor surface diffusion: Effects of low-energy ion bombardment

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 12, 2001, Pages

  Ditchfield, R ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; ION; SILICON;

ARTICLE; ATOM; CALCULATION; DIFFUSION; ENERGY; HIGH TEMPERATURE; ION CURRENT; MASS; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 0034910188     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.125317     Document Type: Article

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