Micro-defects in Ge doped Czochralski grown Si crystals

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 266-271

  Yang, Deren ^a   Chen, Jiahe ^a   Li, Hong ^a   Ma, Xiangyang ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Germanium; A1. Point defects; A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; ULSI CIRCUITS;

CRYSTAL ORIGINATED PARTICLES (COP); GATE OXIDE INTEGRITY (GOI); SINGLE CRYSTAL GROWTH; TETRAVALENT ATOMS;

CRYSTAL GROWTH FROM MELT;

EID: 33745958398     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.010     Document Type: Article

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