Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Applied Physics Letters

Volumn 76, Issue 22, 2000, Pages 3197-3199

  Chong, Y F ^a   Pey, K L ^a   Wee, A T S ^a   See, A ^b   Chan, L ^b   Lu, Y F ^c   Song, W D ^c   Chua, L H ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c DATA STORAGE INSTITUTE   (Singapore)

^d Steag Electronic Systems   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000737494     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126627     Document Type: Article

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