Trapping effects in GaN and SiC microwave FETs

Proceedings of the IEEE

Volumn 90, Issue 6, 2002, Pages 1048-1058

  Binari, Steven C ^a,b   Klein, P B ^b   Kazior, Thomas E ^a,c  

^a IEEE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

GaN; Heterojunction; High electron mobility transistor (HEMT); Metal semiconductor field effect transistor (MESFET); Microwave transistor; SiC; Trapping

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; MICROWAVE DEVICES; OPTIMIZATION; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MESFET); MICROWAVE TRANSISTORS; TRAPPING;

FIELD EFFECT TRANSISTORS;

EID: 0000220552     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021569     Document Type: Article

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