Comparative study on EOR and deep level defects in preamorphised Si implanted with B+, BF2+ and F+-B+

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 16, 2008, Pages 3565-3576

  Girginoudi, D ^a   Tsiarapas, C ^a  

^a DEMOCRITUS UNIVERSITY OF THRACE   (Greece)

Author keywords

DLTS; Implantation; Leakage current; Preamorphisation; TEM; Ultra shallow p+n junctions

Indexed keywords

ANNEALING; BORON; BORON COMPOUNDS; ENHANCED RECOVERY; GERMANIUM; LEAKAGE (FLUID); NONMETALS; SILICON;

COMPARATIVE STUDIES; DEEP LEVELS; DEEP-LEVEL DEFECTS; DLTS; EOR DEFECTS; IMPLANTATION; JUNCTION LEAKAGE CURRENTS; LEAKAGE CURRENT; N-TYPE SILICON; PREAMORPHISATION; TEM; ULTRA-SHALLOW P+N JUNCTIONS;

LEAKAGE CURRENTS;

EID: 49449102273     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.06.012     Document Type: Article

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