10-15 nm ultrashallow junction formation by flash-lamp annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2394-2398

  Ito, Takayuki ^a   Iinuma, Toshihiko ^a   Murakoshi, Atsushi ^a   Akutsu, Haruko ^a   Suguro, Kyoichi ^a   Arikado, Tsunetoshi ^a,d   Okumura, Katsuya ^a,e   Yoshioka, Masaki ^b   Owada, Tatsushi ^b   Imaoka, Yasuhiro ^c   Murayama, Hiromi ^c   Kusuda, Tatsuhumi ^c  

^a TOSHIBA CORPORATION   (Japan)

^b USHIO INC   (Japan)

^c DAINIPPON SCREEN MFG CO LTD   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Activation; As; B; Flash lamp annealing; In; MOSFETs; Retrograde channel; Super saturation; Ultrashallow junction

Indexed keywords

MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

FLASH-LAMP ANNEALING; ULTRASHALLOW JUNCTION;

ION IMPLANTATION;

EID: 0043060338     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2394     Document Type: Article

References (3)

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