Formation of germanium shallow junction by flash annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 157-160

  Satta, A ^a   D'Amore, A ^a,b   Simoen, E ^a   Anwand, W ^c   Skorupa, W ^c   Clarysse, T ^a   Van Daele, B ^a   Janssens, T ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF MESSINA   (Italy)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Activations; B; Flash anneal; Germanium; Junctions; P

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; DIFFUSION; GERMANIUM; ION IMPLANTATION; RAPID THERMAL PROCESSING;

FLASH ANNEALING; JUNCTION STABILITY; SOLID PHASE EPITAXIAL REGROWTH;

SEMICONDUCTOR JUNCTIONS;

EID: 33947693168     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.191     Document Type: Article

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