Ultra-shallow junction formation - Physics and advanced technology

AIP Conference Proceedings

Volumn 1066, Issue , 2008, Pages 11-18

  Colombeau, B ^a   Yeong, S H ^b   Tan, D X M ^b   Smith, A J ^c   Gwilliam, R M ^c   Ng, C M ^b   Mok, K R C ^b   Benistant, F ^b   Chan, L ^b  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Device optimization; Dopant diffusion; Extended defects; Ion implantation; TCAD; Ultra shallow junctions

Indexed keywords

EID: 80055101694     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3033570     Document Type: Conference Paper

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