Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Skorupa, Wolfgang ^a,b   Gebel, Thoralf ^b   Yankov, Rossen A ^b   Paul, Silke ^c   Lerch, Wilfried ^c   Downey, Daniel F ^d   Arevalo, Edwin A ^d  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; ELECTRIC LAMPS; HEAT TREATMENT; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

FLASH LAMP ANNEALING (FLA); LASER THERMAL PROCESSING (LTP); TRANSIENT ENHANCED DIFFUSION (TED); ULTRASHALLOW IMPLANTED JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 22544463657     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1899268     Document Type: Article

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