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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

On the characterisation of grown-in defects in Czochralski-grown Si and Ge

(9) Vanhellemont, Jan a Van Steenbergen, J b,c Holsteyns, F d Roussel, P b Meuris, M b Mlynarczyk K e Spiewak P e,f Geens, W g Romandic, I g

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c JSR Micro NV Belgium (Belgium)

d SEZ AG (Austria)

e Umicore Poland (Poland)

f WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

g UMICORE (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CHARACTERISATION; CRYSTAL ORIGINATED PARTICLES; CZOCHRALSKI; CZOCHRALSKI GROWTH; DENSITY DISTRIBUTIONS; ELECTRICALLY ACTIVE DEFECTS; GE WAFERS; HIGH YIELD; INFRA-RED; INTEGRATED DEVICES; OPTICAL-; SURFACE INSPECTIONS; SURFACE PITTING; TRANSMISSION ELECTRON; VACANCY CLUSTERING; VOID SIZE;

CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; DIAGNOSTIC RADIOGRAPHY; ELECTROMAGNETIC WAVES; FLOW OF SOLIDS; GERMANIUM; GRAIN BOUNDARIES; INSPECTION EQUIPMENT; LIGHT SCATTERING; MACHINE TOOLS; MEDICAL IMAGING; MICROSCOPIC EXAMINATION; OPTICAL MICROSCOPY; POWDERS; REFRACTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE DEFECTS; SURFACES; TOMOGRAPHY; VACANCIES;

SILICON WAFERS;

EID: 53649084236 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9579-3 Document Type: Article

Times cited : (9)

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