Self-diffusion in silicon: Similarity between the properties of native point defects

Physical Review Letters

Volumn 83, Issue 17, 1999, Pages 3454-3457

  Ural, Ant ^a   Griffin, P B ^a   Plummer, J D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000721533     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.3454     Document Type: Article

References (21)

1. W. Frank, U. Gösele, H. Mehrer, and A. Seeger, in Diffusion in Crystalline Solids, G. E. Murch and A. S. Nowick (Academic, New York, 1984), p. 63.
2. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys., 61, 289 (1989).
3. C. S. Nichols, C. G. Van de Walle, and S. T. Pantelides, Phys. Rev. Lett., 62, 1049 (1989).
4. C. S. Nichols, C. G. Van de Walle, S. T. Pantelides, Phys. Rev. B, 40, 5484 (1989).
5. K. C. Pandey, Phys. Rev. Lett., 57, 2287 (1986).
6. A. Antonelli, S. Ismail-Beigi, E. Kaxiras, and K. C. Pandey, Phys. Rev. B, 53, 1310 (1996).
7. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett., 81, 393 (1998).
8. H. Bracht, E. E. Haller, K. Eberl, M. Cardona, and R. Clark-Phelps, in Diffusion Mechanisms in Crystalline Materials, Y. Mishin, G. Vogl, N. Cowern, R. Catlow, and D. Farkas (Materials Research Society, Warrendale, PA, 1998), Vol. 527, p. 335.
9. A. Ural, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett., 73, 1706 (1998).
10. Ant Ural, Peter B. Griffin, and James D. Plummer, Mater. Res. Soc. Symp. Proc. (to be published).
11. R. B. Fair, in Impurity Doping Processes in Silicon, F. F. Y. Wang (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
12. Ant Ural, Peter B. Griffin, and James D. Plummer, J. Appl. Phys., 85, 6440 (1999).
13. P. E. Blöchl, E. Smargiassi, R. Car, D. B. Laks, W. Andreoni, and S. T. Pantelides, Phys. Rev. Lett., 70, 2435 (1993).
14. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B, 52, 16 542 (1995).
15. H. Bracht, in Proceedings of the Electrochemical Society Meeting (The Electrochemical Society, Pennington, NJ, 1999), Vol. 99-1, p. 357.
16. A. Giese, H. Bracht, N. A. Stolwijk, and J. T. Walton, J. Appl. Phys., 83, 8062 (1998).
17. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B, 55, 14 279 (1997).
18. D. Maroudas and R. A. Brown, Phys. Rev. B, 47, 15 562 (1993).
19. D. Maroudas, R. A. Brown, Appl. Phys. Lett., 62, 172 (1993).
20. N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz, Phys. Rev. Lett., 82, 4460 (1999).
21. A. Seeger and K. P. Chik, Phys. Status Solidi, 29, 455 (1968).