Defect engineering by surface chemical state in boron-doped preamorphized silicon

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Yeong, S H ^a   Srinivasan, M P ^a   Colombeau, Benjamin ^b   Chan, Lap ^b   Akkipeddi, Ramam ^c   Kwok, Charlotte T M ^d   Vaidyanathan, Ramakrishnan ^d   Seebauer, Edmund G ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); INTEGRATED CIRCUITS; SEMICONDUCTOR JUNCTIONS;

DEFECT ENGINEERING; DOPANT INTERSTITIALS; MINIMAL IMPLANTATION DAMAGE; PREAMORPHIZED SILICON;

SEMICONDUCTING SILICON;

EID: 34548515016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2780080     Document Type: Article

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