Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

Applied Physics Letters

Volumn 79, Issue 25, 2001, Pages 4145-4147

  Napolitani, E ^a   Coati, A ^a   De Salvador, D ^a   Carnera, A ^a   Mirabella, S ^b   Scalese, S ^b   Priolo, F ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035905289     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425458     Document Type: Article

References (14)

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