Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation

IEEE Electron Device Letters

Volumn 26, Issue 4, 2005, Pages 225-227

  Edwards, Andrew P ^a   Mittereder, Jeffrey A ^a   Binari, Steven C ^a   Katzer, D Scott ^a   Storm, David F ^a   Roussos, Jason A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Gallium nitride; High electron mobility transistor (HEMT); Passivation; Reliability

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS;

MICROWAVE POWER OPERATION; PLASMA TREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17644411450     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.844694     Document Type: Article

References (11)

1. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30 W/mm GaN HEMT's by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
2. T. Kikkawa, E. Mitani, K. Joshin, S. Yokokawa, and Y. Tateno, "An over 100 W CW output power amplifier using AlGaN/GaN HEMTs," in Proc. GaAs MANTECH 2004, p. 6.1.
3. J.A. Mittereder, S. C. Binari, P. B. Klein, J. A. Roussos, D. S. Katzer, D. F. Storm, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress," Appl. Phys. Lett., vol. 83, no. 8, pp. 1650-1652, Aug. 2003.
4. S.C. Binari, P. B. Klein, and T. E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. IEEE, vol. 90, no. 6, pp. 1048-1058, Jun. 2002.
5. H. Kim, R. M. Thompson, V. Tilak, T. R. Prunty, J. R. Shealy, and L. F. Eastman, "Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation," IEEE Electron Device Lett., vol. 24, no. 7, pp. 421-423, Jul. 2003.
6. D.S. Katzer, S. C. Binari, D. F. Storm, J. A. Roussos, B. V. Shanabrook, and E. R. Glaser, "MBE growth of AlGaN/GaN HEMT's with high power density," Electron. Len., vol. 38, no. 25, pp. 1740-1741, Dec. 2002.
7. P. B. Klein, J. A. Mittereder, S. C. Binari, J. A. Roussos, D. S. Katzer, anal D. F. Storm, "Photoionization spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy," Electron. Lett., vol. 39, no. 18, pp. 1354-1356, Sep. 2003.
8. A. Hierro, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Hydrogen passivation of deep levels in n-GaN," Appl. Phys. Lett., vol. 77, no. 10, plo. 1499-1501, Sep. 2000.
9. E. S. Aydil, K. P. Criapis, R. A. Gottscho, V. M. Donnelly, and E. Yoon, "Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors," J. Vac. Sci. Technol. B, vol. 11, no. 2, pp. 195-205, Mar./Apr. 1993.
10. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors," J. Vac. Sci. Technol. B, vol. 21, no. 4, pp. 1844-1855, Jul./Aug. 2003.
11. 3 plasma passivation on N-channel polycrystalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 44, no. 1, pp. 64-68, Jan. 1997.