The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Monakhov, E V ^a   Svensson, B G ^a   Linnarsson, M K ^b   La Magna, A ^c   Italia, M ^c   Privitera, V ^c   Fortunato, G ^d   Cuscun M ^d   Mariucci, L ^d  

^a UNIVERSITY OF OSLO   (Norway)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c CNR IMM   (Italy)

^d IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; BORON; DIFFUSION IN SOLIDS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SILICON WAFERS; WAVE PROPAGATION;

ELECTRICAL ACTIVATION; HEAT WAVE PROPAGATION; TRANSIENT ENHANCED DIFFUSION (TED);

EXCIMER LASERS;

EID: 27644481890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2126144     Document Type: Article

References (20)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2003 ed. (International SEMATECH, Austin, TX, 2003).
2. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes J. Appl. Phys. 81, 6031 (1997).
3. A. Jain, Mater. Res. Soc. Symp. Proc. 810, 229 (2004).
4. C. W. White, W. H. Christie, B. R. Appleton, S. R. Wilson, P. P. Pronko, and C. W. Magee, Appl. Phys. Lett. 33, 662 (1978).
5. R. F. Wood, J. R. Kirkpatrick, and G. E. Giles, Phys. Rev. B 23, 5555 (1981).
6. J. Narajan, O. W. Holland, C. W. White, and R. T. Young, J. Appl. Phys. 55, 1125 (1984).
7. H. Tsukamoto, H. Yamamoto, T. Noguchi, H. Masuya, and T. Suzuki, Jpn. J. Appl. Phys., Part 1 35, 3810 (1996).
8. S. Whelan, V. Privitera, M. Italia, G. Mannino, C. Bongiorno, C. Spinella, G. Fortunato, L. Mariucci, M. Stanizzi, and A. Mittiga, J. Vac. Sci. Technol. B 20, 644 (2002).
9. Y. F. Chong, K. L. Pey, A. T. S. Wee, T. Osipowicz, A. See, and L. Chan, J. Appl. Phys. 92, 1344 (2002).
10. W. Luo, S. Yang, P. Clancy, and M. O. Thompson, J. Appl. Phys. 90, 2262 (2001).
11. Y. Takamura, S. H. Jain, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 92, 230 (2002).
12. S. Whelan, A. La Magna, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, G. Fortunato, and L. Mariucci, Phys. Rev. B 67, 075201 (2003).
13. G. Fortunato, L. Mariucci, A. La Magna, P. Alippi, M. Italia, V. Privitera, B. Svensson, and E. Monakhov, Appl. Phys. Lett. 85, 2268 (2004).
14. V. Privitera, E. Schroer, F. Priolo, E. Napolitani, and A. Carnera, J. Appl. Phys. 88, 1299 (2000).
15. E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, V. Privitera, M. Camalleri, G. Fortunato, and L. Mariucci, Mater. Sci. Eng., B 114-115, 352 (2004).
16. E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscuǹ, and L. Mariucci, Appl. Phys. Lett. 87, 081901 (2005).
17. R. Nipoti and M. Servidori, Appl. Surf. Sci. 43, 321 (1989).
18. G. Mannino, V. Privitera, A. La Magna, E. Rimini, E. Napolitani, G. Fortunato, and L. Mariucci, Appl. Phys. Lett. 86, 051909 (2005).
19. K. S. Jones, H. Banisaukas, J. Glassberg, E. Andideh, C. Jasper, A. Hoover, A. Agarwal, and M. Rendon, Appl. Phys. Lett. 75, 3659 (1999).
20. E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, C. Spinella, C. Bongiorno, V. Privitera, G. Fortunato, and L. Mariucci, Appl. Phys. Lett. 86, 151902 (2005).