Methods of defect-engineering shallow junctions formed by B+-implantation in Si

Journal of Electronic Materials

Volumn 26, Issue 11, 1997, Pages 1349-1354

  Roth, E G ^a,c   Holland, O W ^a   Venezia, V C ^a,c   Nielsen, Bent ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

Dopant diffusion; End of range (EOR) defects; Implantation; Pre amorphization; Shallow electrical junctions; Transient enhanced diffusion (TED)

Indexed keywords

EID: 0001129655     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0083-y     Document Type: Article

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