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Volumn 108, Issue 1, 2004, Pages 52-57

The effect of nitrogen ion implantation on the photoactivity of TiO2 rutile single crystals

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ION IMPLANTATION; MIXTURES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 1642542733     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp030529t     Document Type: Article
Times cited : (386)

References (35)
  • 6
    • 0003903449 scopus 로고
    • Serpone, N., Pilezzetti, E., Eds.; Wiley-Interscience: New York
    • Photocatalysis: Fundamentals and Applications; Serpone, N., Pilezzetti, E., Eds.; Wiley-Interscience: New York, 1989.
    • (1989) Photocatalysis: Fundamentals and Applications
  • 15
    • 1642529972 scopus 로고    scopus 로고
    • note
    • Prior work done by sputtering with nitrogen alone showed that nitrogen was incorporated, but after postannealing, significant nitrogen loss was observed. Using a heavier ion in conjunction with nitrogen allows for a more persistent implantation of the dopant through utilization of the so-called "knock on effecti".
  • 17
    • 0003698310 scopus 로고
    • note; Wiley and Sons
    • The effects seen in the first 50 Å are representative for the pre-equilibrium region of the sputtering process and are ascribed to SIMS-specific phenomena arising from primary ion mixing and the chemical enhancement of the secondary ion yield. Wilson, R.; Stevie, F.; Magee, C. In Secondary Ion Mass Spectrometry; Wiley and Sons: 1989
    • (1989) Secondary Ion Mass Spectrometry
    • Wilson, R.1    Stevie, F.2    Magee, C.3
  • 19
    • 1642489377 scopus 로고    scopus 로고
    • Institute for Solid State Electronics, Technical University of Vienna, private communication
    • T. Roch, Institute for Solid State Electronics, Technical University of Vienna, private communication.
    • Roch, T.1
  • 23
    • 0039465012 scopus 로고
    • Gibson, A. F., Ed.; John Wiley & Sons: New York
    • Mooser, E.; Pearson, W. B. In Progress in Semiconductors; Gibson, A. F., Ed.; John Wiley & Sons: New York, 1960; Vol 5, p 53.
    • (1960) Progress in Semiconductors , vol.5 , pp. 53
    • Mooser, E.1    Pearson, W.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.