Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 13-17

  Florakis, A ^a   Tsoukalas, D ^a,b   Zergioti, I ^a   Giannakopoulos, K ^c   Dimitrakis, P ^b   Papazoglou, D G ^d   Bennassayag, G ^e   Bourdon, H ^f   Halimaoui, A ^f  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^e CEMES CNRS   (France)

^f STMICROELECTRONICS   (France)

Author keywords

Excimer laser annealing; PLAD; Shallow junctions; Sheet resistance

Indexed keywords

EXCIMER LASER ANNEALING; PLAD; SHALLOW JUNCTIONS; SHEET RESISTANCE;

ANNEALING; EXCIMER LASERS; ION IMPLANTATION; LASER APPLICATIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

BORON;

EID: 33751399401     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.006     Document Type: Article

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