메뉴 건너뛰기




Volumn , Issue , 1996, Pages 499-502

High Performance 0.2 μm CMOS with 25 Å Gate Oxide Grown on Nitrogen Implanted Si Substrates

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030387112     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553849     Document Type: Conference Paper
Times cited : (36)

References (3)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.