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Volumn , Issue , 1996, Pages 499-502
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High Performance 0.2 μm CMOS with 25 Å Gate Oxide Grown on Nitrogen Implanted Si Substrates
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELLIPSOMETRY;
INTEGRATED CIRCUIT LAYOUT;
MOSFET DEVICES;
OXIDES;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
GATE OXIDE;
QUANTUM EFFECTS;
TUNNELING CURRENT;
CMOS INTEGRATED CIRCUITS;
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EID: 0030387112
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1996.553849 Document Type: Conference Paper |
Times cited : (36)
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References (3)
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