Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current

Applied Physics Letters

Volumn 79, Issue 24, 2001, Pages 3971-3973

  Lin, H H ^a   Cheng, S L ^a   Chen, L J ^a   Chen, Chih ^b   Tu, K N ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035842816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423773     Document Type: Article

References (10)

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