Ion beams in silicon processing and characterization

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 6513-6561

  Chason, E ^a   Picraux, S T ^a   Poate, J M ^b   Borland, J O ^c   Current, M I ^d   Diaz De La Rubia, T ^e   Eaglesham, D J ^f   Holland, O W ^g   Law, M E ^h   Magee, C W ⁱ   Mayer, J W ^j   Melngailis, J ^k   Tasch, A F ^l  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c Genus Corporation   (United States)

^d APPLIED MATERIALS INC   (United States)

^e LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^f LUCENT TECHNOLOGIES   (United States)

^g OAK RIDGE NATIONAL LABORATORY   (United States)

^h J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

ⁱ Evans East Incorporated   (United States)

^j ARIZONA STATE UNIVERSITY   (United States)

^k UNIVERSITY OF MARYLAND   (United States)

^l UNIVERSITY OF TEXAS AT AUSTIN   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000464473     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365193     Document Type: Review

References (255)

1. R. S. Ohl, Bell Syst. Tech. J. 31, 104 (1952).
2. J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors (Academic, New York, 1970).
3. G. Dearnaley, J. H. Freeman, R. S. Nelson, and J. Stephen, Ion Implantation (North-Holland, Amsterdam, 1973).
4. J. M. Poate and J. W. Mayer, Laser Annealing of Semiconductors (Academic, New York, 1982).
5. L. C. Feldman, J. W. Mayer, and S. T. Picraux, Materials Analysis by Ion Channeling (Academic, New York, 1982).
6. J. S. Williams and J. M. Poate, Ion Implantation and Beam Processing (Academic, Sydney, 1984).
7. J. F. Ziegler, Handbook of Ion Implantation Technology (North-Holland, Amsterdam, 1992).
8. Ninth International Conference on Ion Beam Modification of Materials, Nucl. Instrum. Methods Phys. Res. B 106, 1 (1995).
9. Tenth International Conference on Ion Implantation Technology, Nucl. Instrum. Methods Phys. Res. B 96, 1 (1995).
10. Eleventh International Conference on Ion Beam Analysis, Nucl. Instrum. Methods Phys. Res. B 85, 1 (1994).
11. Seventh International Conference on Radiation Effects in Insulators, Nucl. Instrum. Methods Phys. Res. B 91, 1 (1994).
12. The National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1994).
13. A. E. Michel, W. Rausch, P. A. Rousheim, and R. H. Kastl, Appl. Phys. Lett. 50, 416 (1987).
14. A. F. Tasch, C. Park, J. Alvis, and S. Novak, J. Electrochem. Soc. 136, 810 (1989).
15. C. Park, K. M. Klein, A. F. Tasch, R. B. Simonton, S. Noval, and G. Lux, COMPEL 10, 331 (1991).
16. D. H. Lim, S.-H. Yang, S. J. Morrisand, and A. F. Tasch, Tech. Dig. Int. Electron Devices Meet. , 291 (1993).
17. S.-H. Yang, S. J. Morris, D. H. Lim, and A. F. Tasch, J. Electron. Mater. 23, 801 (1994).
18. S. J. Morris, S.-H. Yang, D. H. Lim, C. Park, K. M. Klein, M. Manassian, and A. F. Tasch, IEEE Trans. Semicond. Manuf. 8, 408 (1995).
19. M. T. Robinson and I. M. Torrens, Phys. Rev. B 9, 5008 (1974).
20. K. M. Klein, C. Park, and A. F. Tasch, Tech. Dig. Int. Electron Devices Meet. , 745 (1990).
21. K. M. Klein, C. Park, and A. F. Tasch, IEEE Trans. Electron Devices 39, 1614 (1992).
22. S.-H. Yang, S. J. Morris, S. Tian, M. Morris, K. Parab, B. Obradovic, A. F. Tasch, and C. Snell. Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. Los Angeles, 1996. Meeting Abstracts, Vol. 96-1, pp. 485-486, Spring Meeting of the Electrochemical Society, May 5-10, 1996.
23. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985), Vol. I.
24. K. M. Klein, C. Park, and A. F. Tasch, Appl. Phys. Lett. 57, 2701 (1990).
25. K. M. Klein, C. Park, and A. F. Tasch, Nucl. Instrum. Methods Phys. Res. B 59/60, 60 (1991).
26. R. H. Wolfe, M. Needels, M. Arias, and J. D. Joannopoulos, IEEE Comput. Graphics Appl. 12, 45 (1992).
27. L. A. Christel, J. F. Gibbons, and T. W. Sigmon, J. Appl. Phys. 52, 7143 (1981).
28. S. J. Morris, S.-H. Yang, S. Tian, K. Parab, and A. F. Tasch, Mater. Res. Soc. Symp. Proc. 396, 27 (1996); S. J. Morris, D. Lim, S.-H. Yang, S. Tian, K. Parab, A. F. Tasch, and M. E. Law, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology, Los Angeles, 1996, Meeting Abstracts, Vol. 96-1, pp. 483-484, Spring Meeting of the Electrochemical Society, May 5-10, 1996.
29. S. J. Morris, S.-H. Yang, S. Tian, K. Parab, and A. F. Tasch, Mater. Res. Soc. Symp. Proc. 396, 27 (1996); S. J. Morris, D. Lim, S.-H. Yang, S. Tian, K. Parab, A. F. Tasch, and M. E. Law, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology, Los Angeles, 1996, Meeting Abstracts, Vol. 96-1, pp. 483-484, Spring Meeting of the Electrochemical Society, May 5-10, 1996.
30. M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Oxford University Press, Oxford, 1987).
31. M. Barone and D. B. Graves, J. Appl. Phys. 77, 1263 (1995).
32. J. E. Rubio, L. A. Marques, M. Jaraiz, L. A. Bailon, and J. Barbolla, Nucl. Instrum. Methods Phys. Res. B 102, 301 (1995).
33. T. Diaz de la Rubia and G. H. Gilmer, Phys. Rev. Lett. 74, 2507 (1995).
34. E. Chason, P. J. Bedrossian, K. M. Horn, J. Y. Tsao, and S. T. Picraux, Appl. Phys. Lett. 57, 1793 (1990).
35. H. L. Heinisch, Radiat. Eff. Solids 113, 53 (1990).
36. H. L. Heinisch, J. Nucl. Mater. 117, 46 (1983).
37. F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
38. J. Tersoff, Phys. Rev. B 39, 5566 (1989).
39. G. H. Gilmer, T. Diaz de la Rubia, M. Jaraiz, and D. Stock, Nucl. Instrum. Methods Phys. Res. B 102, 247 (1995).
40. M. H. Grabow, G. H. Gilmer, and A. F. Baker, Mater. Res. Soc. Symp. Proc. 141, 349 (1989).
41. P. E. Blochl, E. Smargiassi, R. Car, D. B. Laks, and S. T. Pantelides, Phys. Rev. Lett. 70, 2435 (1993).
42. J. Zhu, L. Yang, C. Mailhiot, T. Diaz de la Rubia, and G. H. Gilmer, Nucl. Instrum. Methods Phys. Res. B 102, 29 (1995).
43. L. A. Miller, D. K. Brice, A. K. Prinja, and S. T. Picraux, Phys. Rev. B 49, 16953 (1994).
44. M. J. Caturla, T. Diaz de la Rubia, and G. H. Gilmer, Mater. Res. Soc. Symp. Proc. 316. 111 (1994).
45. K. Gärtner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Sarite, W. Eckstein, J. J. Jiménez-Rodríguez, A. M. C. Pérez-Martín, E. P. Andribet, V. Konoplev, A. Gras-Marti, M. Posselt, M. H. Shapiro, T. A. Tombrello, H. M. Urbassek, H. Hensel, Y. Yamamura, and W. Takeuchi, Nucl. Instrum. Methods Phys. Res. B 102, 183 (1995).
46. J. P. Biersack and J. F. Ziegler, Nucl. Instrum. Methods Phys. Res. 194, 93 (1982).
47. J. B. Gibson, A. N. Goland, M. Milgram, and G. H. Vineyard, Phys. Rev. 120, 1229 (1960).
48. T. Diaz de la Rubia, R. S. Averback, R. Benedek, and W. E. King, Phys. Rev. Lett. 59, 1930 (1987).
49. J. A. Floro, B. K. Kellerman, E. Chason, S. T. Picraux, D. K. rince, and K. M. Horn, J. Appl. Phys. 77, 2351 (1995).
50. P. Bedrossian, J. E. Houston, J. Y. Tsao, E. Chason, and S. T. Picraux, Phys. Rev. Lett. 67, 124 (1991); P. J. Bedrossian, M. J. Caturla, and T. Diaz de la Rubia, Appl. Phys. Lett. 70, 176 (1997).
51. P. Bedrossian, J. E. Houston, J. Y. Tsao, E. Chason, and S. T. Picraux, Phys. Rev. Lett. 67, 124 (1991); P. J. Bedrossian, M. J. Caturla, and T. Diaz de la Rubia, Appl. Phys. Lett. 70, 176 (1997).
52. B. K. Kellerman, J. A. Floro, E. Chason, D. K. Brice, and S. T. Picraux, J. Vac. Sci. Technol. A 13, 972 (1995).
53. D. K. Brice, J. Y. Tsao, and S. T. Picraux, Nucl. Instrum. Methods Phys. Res. B 44, 68 (1989).
54. M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. Diaz de la Rubia, Appl. Phys. Lett. 68, 409 (1996).
55. R. B. Fair. Impurity Doping Processes in Silicon, edited by F. F. Y. Yang (North-Holland, New York, 1981).
56. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
57. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, and J. M. Poate, Nucl. Instrum. Methods Phys. Res. B 96, 187 (1995).
58. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 66, 568 (1995).
59. H.-J. Gossmann, F. C. Unterwald, and H. S. Luftman, J. Appl. Phys. 73, 8237 (1993).
60. J. M. Poate, D. J. Eaglesham, G. H. Gilmer, H.-J. Gossmann, M. Jaraiz, C. S. Rafferty, and P. A. Stolk, Tech. Dig. Int. Electron Devices Meet. , 77 (1995).
61. H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, Appl. Phys. Lett. 63, 639 (1993).
62. J. K. Listebarger, K. S. Jones, and J. A. Slinkman, J. Appl. Phys. 73, 4815 (1993).
63. H. L. Meng, S. Prussin, M. E. Law, and K. S. Jones, J. Appl. Phys. 73, 955 (1993).
64. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
65. D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, T. E. Haynes, and J. M. Poate, Nucl. Instrum. Methods Phys. Res. B 106, 191 (1995).
66. S. M. Davidson and G. R. Booker, Radiat. Eff. 6, 33 (1970).
67. A. Bourret, Inst. Phys. Conf. Ser. 87, 39 (1987).
68. S. Takeda, Jpn. J. Appl. Phys. 1 30, L639 (1991).
69. S. Takeda, and M. Kohyama, Inst. Phys. Conf. Ser. 134, 33 (1993).
70. P. B. Griffin and J. D. Plummer, Mater. Res. Soc. Symp. Proc. 71, 75 (1986).
71. R. J. Schreutelkamp, J. S. Custer, J. R. Liefting, W. X. Lu, and F. W. Saris, Mater. Sci. Rep. 6, 1 (1991).
72. D. J. Eaglesham, P. A. Stolk, J.-Y. Cheng, H.-J. Gossmann, T. E. Haynes, and J. M. Poate, Microscopy of Semiconductors (Institute of Physics, Oxford, 1995), p. 451.
73. H. Kinoshita and D.-L. Kwong, Tech. Dig. Int. Electron Devices Meet. , 165 (1992).
74. H. Kinoshita, T. H. Huang, and D. L. Kwong. J. Appl. Phys. 75, 8213 (1994).
75. R. B. Fair, IEEE Trans. Electron Devices 35, 285 (1988).
76. R. B. Fair and J. E. Rose, IEEE International Conference on Computer-Aided Design, Santa Clara, 1987 (IEEE, Piscataway, NJ, 1987), p. 248.
77. Y. M. Kim, G. Q. Lo, H. Kinoshita, D. L. Kwong, H. H. Tseng, and R. Hance, J. Electrochem. Soc. 138, 1122 (1991).
78. Y. Kim, H. Z. Massoud, and R. B. Fair, J. Electron. Mater. 18, 143 (1989).
79. Y. M. Kim, G. Q. Lo, D. L. Kwong, H. H. Tseng, and R. Hance, Appl. Phys. Lett. 55, 2316 (1989).
80. R. Subrahmanyan, J. Vac. Sci. Technol. B 10, 1 (1992).
81. Proceedings of the Third International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Silicon, J. Vac. Sci. Technol. B 14, (1996).
82. D. Mathiot and J. C. Pfister, J. Appl. Phys. 55, 3518 (1984).
83. M. Orlowski, Appl. Phys. Lett. 53, 1323 (1988).
84. H. Park and M. E. Law, J. Appl. Phys. 72, 3431 (1992).
85. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
86. J. Zhu, T. Diaz de la Rubia, L. H. Yang, C. Mailhiot, and G. H. Gilmer, Phys. Rev. B 54, 4741 (1996).
87. P. A. Schultz, J. S. Nelson, and A. F. Wright (unpublished).
88. W. Frank, in Critical Issues in Semiconductor Materials and Processing Technologies, edited by S. Coffa (Kluwer Academic, Amsterdam, 1992), p. 383.
89. R. J. Dexter, S. B. Watelski, and S. T. Picraux, Appl. Phys. Lett. 23, 455 (1973).
90. H. H. Hosack, T. W. Houston, and G. P. Pollack, Solid State Technol. 33, 61 (1990).
91. M. Bruel, Electron. Lett. 51, 1201 (1995); M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
92. M. Bruel, Electron. Lett. 51, 1201 (1995); M. Bruel, Nucl. Instrum. Methods Phys. Res. B 108, 313 (1996).
93. K. Tsukamoto, T. Kuroi, S. Komori, and Y. Akasaka, Solid State Technol. 35, 49 (1992).
94. K. Lee, R. H. Yan, D. Y. Jeon, G. M. Chin, Y. O. Kim, D. M. Tennant, B. Razavi, H. D. Lin, Y. G. Wey, H. Westerwick, M. D. Morris, R. W. Johnson, T. M. Liu, M. Tarsia, M. Cerullo, R. G. Swartz, and A. Ourmazd, Tech. Dig. Int. Electron Devices Meet. , 131 (1993).
95. J. Borland and R. Koelsch, Solid State Technol. 36, 28 (1993).
96. J.-Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, J. Appl. Phys. 80, 2105 (1996).
97. M. Tamura, T. Ando, and K. Ohyu, Nucl. Instrum. Methods Phys. Res. B 59/60, 572 (1991).
98. M. A. Guerra, Solid State Technol. 33, 75 (1990).
99. H. Lu, Y. Lee, L. Hite, T. Houston, Y. D. Sheu, R. Rajgopal, C. C. Shen, J. M. Hwang, and G. Pollack, Proceedings of the 1993 IEEE International SOI Conference (IEEE, Piscataway, NJ, 1993), p. 182.
100. B.-Y. Hwang, J. Tsao, M. Racanelli, M. Huang, J. Foerstner, T. Wetteroth, and L.-S. Lim, in Ref. 96, p. 128.
101. K. Suma, T. Tsuruda, H. Hidaka, T. Eimori, T. Oashi, Y. Yamaguchi, T. Iwamatsu, M. Hirose, F. Morishita, K. Arimoto, K. Fujishima, Y. Inoue, T. Nishimura, and T. Yoshihara, IEEE J. Solid-State Circuits 29, 1323 (1994).
102. L. Peters, Semicond. Int. 16, 48 (1993)
103. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
104. J. D. Lee, J. C. Park, S. J. Krause, P. Roitman, and M. K. El-Ghor, Mater. Res. Soc. Symp. Proc. 235, 133 (1992).
105. O. W. Holland, T. P. Sjoreen, D. Fathy, and J. Narayan, Appl. Phys. Lett. 45, 10 (1984).
106. C. Jassaud, J. Stomenos, J. Margail, M. Dupuy, B. Blanchard, and M. Bruel, Appl. Phys. Lett. 46, 1064 (1985).
107. S. Visitserngtrakul, C. O. Jung, B. F. Cordts, P. Roitman, and S. J. Krause, Mater. Res. Soc. Symp. Proc. 183, 135 (1990).
108. D. S. Zhou, O. W. Holland, and J. D. Budai, Appl. Phys. Lett. 63, 3580 (1993).
109. J. D. Lee, J. C. Park, D. Veneables, S. J. Krause, and P. Roitman, Mater. Res. Soc. Symp. Proc. 316, 699 (1994).
110. O. W. Holland, L. Xie, B. Nielsen, and D. S. Zhou, J. Electron. Mater. 25, 99 (1996).
111. O. W. Holland and C. W. White, Nucl. Instrum. Methods Phys. Res. B 59/60, 353 (1991).
112. J. Linnros, R. G. Elliman, and W. L. Brown, J. Mater. Res. 3, 1208 (1988).
113. G. A. Rozgonyi, S. Koveshnikov, and A. Agarwal, in Semiconductor Silicon 1994 edited by H. R. Huff, W. Bergholz, and K. Sumino (The Electrochemical Society, Pennington, NJ, 1994), Vols. 94-10, p. 868, and other articles in this volume.
114. E. R. Weber and D. Gilles, in Semiconductor Silicon 1990, edited by H. R. Huff, K. G. Barraclough, and J. Chikawa (The Electrochemical Society, Pennington, NJ, 1990), Vol. 90-7, p. 585.
115. W. Schroter, M. Seibt, and D. Gilles, in Materials Science and Technology, edited by R. W. Cahn, P. Haasen, and E. J. Kramer (VCH, New York, 1991), Vol. 4, p. 539.
116. T. M. Buck, K. A. Pickar, J. M. Poate, and C. M. Hsieh, Appl. Phys. Lett. 21, 485 (1972).
117. T. E. Seidel, R. L. Meek, and A. G. Cullis, J. Appl. Phys. 46, 600 (1975).
118. J. R. Liefting, R. J. Schreutelkamp, W. Y. Lu, and F. W. Saris, Mater. Res. Soc. Symp. Proc. 157, 641 (1990).
119. T. Kuroi, Y. Kawasaki, S. Komori. K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki, and T. Shringyoh, Jpn. J. Appl. Phys. 1 32, 303 (1993).
120. H. Wong, N. W. Cheung, and P. K. Chu, Appl. Phys. Lett. 52, 889 (1988).
121. D. D. Jacobson, A. Kamgar, D. J. Eaglesham, E. J. Lloyd, S. J. Hillenium, and J. M. Poate, Nucl. Instrum. Methods Phys. Res. B 96, 416 (1995).
122. S. M. Myers, D. M. Follstaedt, D. M. Bishop, and J. W. Medernach, in Ref. 110, p. 808.
123. S. M. Myers, D. M. Bishop, D. M. Follstaedt, H. J. Stein, and W. R. Wampler, Mater. Res. Soc. Symp. Proc. 283, 549 (1993).
124. S. M. Myers, D. M. Follstaedt, G. A. Petersen, C. H. Seager, H. J. Stein, and W. R. Wampler, Nucl. Instrum. Methods Phys. Res. B 106, 379 (1995).
125. D. M. Follstaedt, S. M. Myers, G. A. Petersen, and J. D. Medernach, J. Electron. Mater. 25, 151 (1996); S. M. Myers and D. M. Follstaedt, J. Appl. Phys. 79, 1346 (1996).
126. D. M. Follstaedt, S. M. Myers, G. A. Petersen, and J. D. Medernach, J. Electron. Mater. 25, 151 (1996); S. M. Myers and D. M. Follstaedt, J. Appl. Phys. 79, 1346 (1996).
127. V. Raineri, A. Battaglia, and E. Rimini, Nucl. Instrum. Methods Phys. Res. B 96, 249 (1995).
128. J. Wong-Leung, J. S. Williams, R. G. Elliman, E. Nygren, D. J. Eaglesham, D. C. Jacobson, and J. M. Poate, Nucl. Instrum. Methods Phys. Res. B 96, 253 (1995).
129. M. H. F. Overwijk, J. Politiek, R. C. M. de Kruif, and P. C. Zalm, Nucl. lnstrum. Methods Phys. Res. B 96, 257 (1995).
130. C. C. Griffioen, J. H. Evans, P. C. de Jong, and A. Van Veen, Nucl. Instrum. Methods Phys. Res. B 27, 417 (1987).
131. S. M. Myers and G. A. Petersen, Mater. Res. Soc. Symp. Proc. 396, 733 (1996).
132. S. M. Myers, G. A. Petersen, and C. H. Seager, J. Appl. Phys. 80, 3717 (1996).
133. M. Gardner, D. Wrister, J. Fulford, and J. Borland, 1994 Symposium on VLSI Technology (IEEE, Piscataway, NJ, 1994), p. 111.
134. P. A. Stolk, J. L. Benton, D. J. Eaglesham, D. C. Jacobsen, J.-Y. Cheng, J. M. Poate, S. M. Myers, and T. E. Haynes, Appl. Phys. Lett. 68, 51 (1996).
135. T. Ando, S. Isomae, and M. Tamura, in Defects in Silicon II, edited by W. M. Bullis, U. Gösele, and F. Shimura (The Electrochemical Society, Pennington, NJ, 1991), Vol. 91-9, p. 659.
136. Data courtesy of C. Hitzman, Charles Evans and Associates, Redwood City, CA.
137. C. W. Magee and M. R. Frost, Int. J. Mass Spectrom. Ion Processes 143, 29 (1995).
138. Data courtesy of E. Ishida, Advanced Micro Devices, Sunnyvale, CA.
139. K. H. Weiner, P. G. Carey, A. M. McCarthy, and T. W. Sigmon, Microelectron. Eng. 20, 107 (1993).
140. P. Williams, in Practical Surface Analysis, Vol. 2 Ion and Neutral Spectroscopy, edited by D. Briggs and M. P. Seah (Wiley, New York, 1992).
141. G. A. Cooke, P. Pearson, R. Gibbs, M. G. Dowsett, and C. Hill, J. Vac. Sci. Technol. B 14, 348 (1996).
142. R. Alvis, S. Luning, L. Thompson, R. Sinclair, and P. Griffin, J. Vac. Sci. Technol. B 14, 231 (1996).
143. D. Venables and D. M. Maher, J. Vac. Sci. Technol. B 14, 421 (1996).
144. M. Berrett, M. Dennis, D. Tiffin, Y. Li, and C. K. Shih, J. Vac. Sci. Technol. B 14, 447 (1996).
145. G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopanski, M. Rogers, and D. Adderton, J. Vac. Sci. Technol. B 14, 426 (1996).
146. W.-K. Chu, J. W. Mayer, and M.-A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978).
147. An example of a simulation program is RUMP, L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).
148. L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis (North-Holland, New York, 1986).
149. M. Ohring, The Materials Science of Thin Films (Academic, Boston, 1992).
150. Handbook of Modern Ion Beam Materials Analysis, edited by J. R. Tesmer, M. Nastasi, C. J. Maggiore, J. C. Barbour, and J. W. Mayer (Materials Research Society, Pittsburgh, 1995).
151. G. Vizkelethy, P. Revesz, J. W. Mayer, and J. Li, Surf. Interface Anal. 20, 309 (1993).
152. Z. Atzmon, A. E. Bair, E. J. Jaquez, J. W. Mayer, D. Chrandrasekhar, D. J. Smith, R. L. Hervig, and McD. Robinson, Appl. Phys. Lett. 65, 2559 (1994).
153. J. C. Barbour and B. L. Doyle, in Ref. 46.
154. A. E. Bair, Z. Atzmon, S. W. Russell, T. L. Alford, J. W. Mayer, and J. C. Barbour, Nucl. Instrum. Methods Phys. Res. B 103, 339 (1995).
155. W. Assmann, P. Hartung, H. Huber, P. Staat, H. Steffeus, and Ch. Steinhauser, Nucl. Instrum. Methods Phys. Res. B 85, 726 (1991).
156. R. Siegele, H. Haugen, J. A. Davies, J. S. Forster, and H. R. Andrews, J. Appl. Phys. 76, 4524 (1994).
157. J. A. Knapp and B. L. Doyle, Nucl. Instrum. Methods Phys. Res. B 45, 143 (1990).
158. M. H. Mendenhall and R. A. Weller, Nucl. Instrum. Methods Phys. Res. B 47, 193 (1990).
159. J. A. Knapp, D. K. Brice, and J. C. Banks, Nucl. Instrum. Methods Phys. Res. B 108, 324 (1996); J. A. Knapp, J. C. Banks, and B. L. Doyle, Sandia Report SAND94-0391, April 1994.
160. J. A. Knapp, D. K. Brice, and J. C. Banks, Nucl. Instrum. Methods Phys. Res. B 108, 324 (1996); J. A. Knapp, J. C. Banks, and B. L. Doyle, Sandia Report SAND94-0391, April 1994.
161. B. L. Doyle, J. Vac. Sci. Technol. A 3, 1374 (1985).
162. G. L. Klody, J. B. Schroeder, J. A. Ferry, T. J. Pollock, and E. D. Adams, Nucl. Instrum. Methods Phys. Res. B 56/57, 704 (1991).
163. A. Kinomura, M. Takai, S. Namba, H. Ryssel, P. H. Tsien, E. Burte, M. Satou, and A. Chayahara, Nucl. Instrum. Methods Phys. Res. B 64, 770 (1992).
164. K. M. Horn, B. L. Doyle, F. W. Sexton, J. S. Laird, A. Saint, M. Cholewa, and G. J. F. Legge, Nucl. Instrum. Methods Phys. Res. B 77, 355 (1993).
165. F. W. Sexton, K. M. Horn, B. L. Doyle, J. S. Laird, M. Cholewa, A. Saint, and G. J. F. Legge, Nucl. Instrum. Methods Phys. Res. B 79, 436 (1993).
166. B. El-Kareh, J. Vac. Sci. Technol. B 12, 172 (1994).
167. A. Hori, H. Nakaoka, H. Umimoto, K. Yamashita, M. Takase, N. Shimizu, B. Mizuno, and S. Odanaka, Tech. Dig. Int. Electron Devices Meet. ,485 (1994).
168. J. H. Freeman, in Ion Implantation Technology-'92, edited by D. F. Downey, M. Farley, K. S. Jones, and G. Ryding (North-Holland, Amsterdam, 1993), pp. 357-364.
169. H. Ito and N. R. White, Nucl. Instrum. Methods Phys. Res. B 55, 527 (1991).
170. M. A. Foad, D. G. Armour, and J. G. England, in Ion Implantation Technology-'94, edited by S. Coffa, G. Ferla, F. Priolo, and E. Rimini (North-Holland, Amsterdam, 1995), p. 543.
171. B. O. Pedersen, R. B. Liebert, D. F. Downey, and S. Satoh, in Ref. 163, p. 587.
172. N. White, M. E. Mack, G. Ryding, D. H. Douglas-Hamilton, K. Steeples, M. Farley, V. Gillis, V. Benveniste, A. Wittkower, and R. Lamracht, Solid State Technol. 32, 568 (1989).
173. Y. Sato, K. Anazi, and F. Todokoro, IEEE Trans. Semicond. Manuf. 5, 329 (1992); IEEE Trans. Semicond. Manuf. 6, 268 (1993).
174. Y. Sato, K. Anazi, and F. Todokoro, IEEE Trans. Semicond. Manuf. 5, 329 (1992); IEEE Trans. Semicond. Manuf. 6, 268 (1993).
175. M. I. Current, W. Lukaszek, and M. C. Vella, N. H. Tripsas, Nucl. Instrum. Methods Phys. Res. B 96, 34 (1995).
176. K. F. Schuegraf and C.-M. Hu, 1994 IEEE International Reliability Physics Symposium Proceedings (IEEE, Piscataway, NJ, 1994), p. 126.
177. M. C. Vella, W. Lukaszek, M. I. Current, and N. H. Tripsas, Nucl. Instrum. Methods Phys. Res. B 96, 48 (1995).
178. M. Duane, P. Nunan, M. ter Beek, and R. Subramanyan, J. Vac. Sci. Technol. B 14, 218 (1996).
179. R. Simonton J. Shi, T. Boden, P. Maillot, and L. A. Larson, Mater. Res. Soc. Symp. Proc. 316, 153 (1994).
180. M. I. Current, M. Inoue, S. Nakashima, N. Ohno, M. Kuribara, Y. Matsunaga, T. Hara, D. Wagner, S. Leung. B. Adibi, G. Lecouras, and L. A. Larson, Nucl. Instrum. Methods Phys. Res. B 74, 175 (1993).
181. M. I. Current, T. Hara, S. Fujii, M. Inoue, and N. Ohno, Advanced Materials '93, Vol. IV IUMRS (North-Holland, Amsterdam, 1994), p. 401.
182. T. Suzuki, H. Yamaguchi, S. Ohzono, and N. Natsuaki, Proceedings of the International Conference on Solid State Devices and Materials- '90, (Japan Society of Applied Physics, Tokyo, 1990), p. 1163.
183. T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama, T. Suzuki, and N. Natsuaki, Proceedings of the International Conference on Solid State Devices and Materials-'91 (Japan Society of Applied Physics, Tokyo, 1991), pp. 44-46.
184. T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto, and Y. Akasaka, in Ref. 177, pp. 56-58.
185. B. Mizuno (private communication).
186. M. I. Current, L. A. Larson, W. A. Keenan, and C. B. Yarling, in Handbook of Ion Implantation Technology, edited by J. F. Ziegler (NorthHolland, Amsterdam, 1992), p. 647.
187. M. I. Current, B. Adibi, T. Marin, S. Leung, D. W. Wagner, P. McDonagh, N. Clarke, M. T. Wauk, N. Sugiyama, Y. Matsunaga, and J. W. Wilson, in Ref. 165, p. 622-625.
188. M. I. Current, N. Ohno, K. Hurley, W. A. Keenan, T. L. Guitner, and C. Jeynes, Solid State Technol. 36, 111 (1993).
189. M. I. Current, I. Yamada, N. W. Cheung, P. L. F. Hemment, and K. J. Reeson, in Ref. 180, p. 363.
190. E. Ishida, A Survey of Ultra-shallow Doping Technology, Sematech Technical Transcript No. 95062857A-TR (1995).
191. I. Yamada, Mater. Res. Soc. Symp. Proc. 268, 261 (1992).
192. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
193. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
194. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
195. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
196. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
197. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
198. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
199. P. A. Rose, Nucl. Instrum. Methods Phys. Res. B 6, 1 (1985): see also other proceedings of Ion Implantation Technology (earlier known as Ion Implantation Equipment and Techniques) in Nucl. Instrum. Methods Phys. Res. 189, (1981); Nucl. Instrum. Methods Phys. Res. B 6, (1985); Nucl. Instrum. Methods Phys. Res. B 21, (1987); Nucl. Instrum. Methods Phys. Res. B 37/38, (1989); Nucl. Instrum. Methods Phys. Res. B 55, (1991); Nucl. Instrum. Methods Phys. Res. B 74, (1993); Nucl. Instrum. Methods Phys. Res. B 96, (1995).
200. International Workshop on Plasma-based Ion Implantation. J. Vac. Sci. Technol. B 12, (1994).
201. M. R. Sardela, H. Radpisheh, L. Hultman, and G. V. Hasson, Proceedings of the International Conference on Solid State Devices and Materials-'93 (Japan Society of Applied Physics, 1993), p. 222.
202. I. Yamada, J. Matsuo, Z. Insepov, and M. Akizuki. Nucl. Instrum. Methods Phys. Res. B 106, 165 (1995).
203. M. I. Current, R. Mathur, M. Kump, and L. A. Larson, Nucl. Instrum. Methods Phys. Res. B 102, 198 (1995).
204. Workshops on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductor J. Vac. Sci. Technol. B 10, (1992); J. Vac. Sci. Technol. B 12, (1994).
205. Workshops on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductor J. Vac. Sci. Technol. B 10, (1992); J. Vac. Sci. Technol. B 12, (1994).
206. M. T. Wauk, M. Castle, J. G. England, and M. I. Current, Microcontamination 12, 29 (1994).
207. N. Natsuaki, T. Kamata, K. Kondo, and Y. Kureishi, Nucl. Instrum. Methods Phys. Res. B 96, 62 (1995).
208. J. L. Bartelt, Solid State Technol. 29, 215 (1986), and references therein.
209. S. V. Pendharkar, J. C. Wolfe, H. R. Rampersad, Y.-L. Chau, D. L. Licon, M. D. Morgan, W. E. Home, R. C. Tiberio, and J. N. Randall, J. Vac. Sci. Technol. B 13, 2588 (1995).
210. J. C. Wolfe, S. Sen, S. V. Pendhakar, P. Manager, and A. R. Shimkunas, J. Vac. Sci. Technol. B 10, 2716 (1992).
211. P. E. Manager, A. R. Shimkunas, J. C. Wolfe, S. Sen, H. Loschner, and G. Stengl, J. Vac. Sci. Technol. B 10, 2819 (1992).
212. A. Birman, B. Levush, J. Melngailis, H. Loschner, and G. Stengl. J. Vac. Sci. Technol. B 13, 2584 (1995).
213. H. Löschner and G. Stengl, IMS (private communication).
214. A. D. Dubner, A. Wagner, J. P. Levin, and J. Mauer, J. Vac. Sci. Technol. B 10, 3212 (1992).
215. I. Higashikawa, K. Koga, T. Tanaka, M. Morigami, and T. Itoh, Microelectron. Eng. 21, 87 (1993).
216. H. Löschner, G. Stengl, I. L. Berry, J. N. Randall, J. C. Wolfe, W. Finkelstein, R. W. Hill, J. Melngailis, L. R. Harriott, W. Brünger, and L. M. Buchmann, Proc. SPIE 2194, 384 (1994).
217. H. Löschner, G. Stengl, A. Chalupka, J. Fegerl, R. Fischer, E. Hammel, G. Lammer, L. Malek, R. Nowak, C. Traher, H. Vonach, and P. Wolf, J. Vac. Sci. Technol. B 11, 2409 (1993).
218. Provided by the Advanced Lithography Group, Columbia, MD.
219. W. H. Brunger, L.-M. Buchmann, M. A. Torkler, and W. Finkelstein, J. Vac. Sci. Technol. B 12, 3547 (1994).
220. G. Stengl, G. Bosch, A. Chalupka, J. Fegerl, R. Fischer, G. Lammer, H. Löschner, L. Malek, R. Nowak, C. Traher, P. Wolf, and H. Vonach, J. Vac. Sci. Technol. B 10, 2838 (1992).
221. A. Chalupka, G. Stengl, H. Buschbeck, G. Lammer, H. Vonach, R. Fischer, E. Hammel, H. Löschner, R. Nowak, and P. Wolf, J. Vac. Sci. Technol. B 12, 3513 (1994).
222. E. Hammel, A. Chalupka, J. Fergerl, R. Fischer, G. Lammer, H. Löschner, L. Malke, R. Nowak, G. Stengl, H. Vonach, P. Wolf, W. H. Brünger, L.-M. Buchmann, M. Torkler, E. Cekan, W. Fallmann, F. Paschke, G. Stangl, F. Thalinger, I. L. Berry, L. R. Harriott, W. Finkelstein, and R. W. Hill, J. Vac. Sci. Technol. B 12, 3533 (1994).
223. A detailed discussion of liquid metal ion sources can be found in P. D. Prewett and G. L. R. Mair, Focused Ion Beams from Liquid Metal Ion Sources (Research Studies Press and Wiley, 1991), Chaps. I-IV.
224. G. M. Atkinson, F. P. Stratton, and R. L. Kubena, J. Vac. Sci. Technol. B 10, 3104 (1992).
225. Figure provided by FEI, Beaverton, OR.
226. Figure provided by Micrion Corporation, Peabody, MA.
227. K. P. Müller and H. C. Petzold. Proc. SPIE 1263, 12 (1990); K. P. Müller, Jpn. J. Appi. Phys. 1 128, 2348 (1989).
228. K. P. Müller and H. C. Petzold. Proc. SPIE 1263, 12 (1990); K. P. Müller, Jpn. J. Appi. Phys. 1 128, 2348 (1989).
229. T. Ishitani and T. Ohnishi, Jpn. J. Appl. Phys. 1 128, L320 (1989); J. Vac. Sci. Technol. A 9, 3084 (1991).
230. T. Ishitani and T. Ohnishi, Jpn. J. Appl. Phys. 1 128, L320 (1989); J. Vac. Sci. Technol. A 9, 3084 (1991).
231. X. Xu, A. D. Della Ratta, J. Sosonkina, and J. Melngailis, J. Vac. Sci. Technol. B 10, 2675 (1992).
232. K. Gamo, Y. Ochiai, and S. Namba, Jpn. J. Appl. Phys. 21, L792 (1982).
233. P. R. Kola, G. K. Celler, and L. R. Harriott, Mater. Res. Soc. Symp. Proc. 279, 593 (1993).
234. J. D. Casey, A. F. Doyle, R. G. Lee, D. K. Stewart, and H. Zimmerman, Microelectron. Eng. 24, 43 (1994); D. C. Ferranti, J. C. Morgan, B. Thompson, and W. C. Joyce, Proc. SPIE 2194, 394 (1994).
235. J. D. Casey, A. F. Doyle, R. G. Lee, D. K. Stewart, and H. Zimmerman, Microelectron. Eng. 24, 43 (1994); D. C. Ferranti, J. C. Morgan, B. Thompson, and W. C. Joyce, Proc. SPIE 2194, 394 (1994).
236. Z. Xu, K. Gamo, and S. Namba, J. Vac. Sci. Technol. B 6. 1039 (1988).
237. T. S. Stark, G. M. Shedd, J. Vitarelli, D. P. Griffis, and P. E. Russell, J. Vac. Sci. Technol. B 13, 2565 (1995).
238. A. Wagner, P. Longo, S. Cohen, and P. Blauner, J. Vac. Sci. Technol. B 13, 2629 (1995).
239. R. J. Young and J. Puretz. J. Vac. Sci. Technol. B 13, 2576 (1995).
240. P. Blauner, Y. Butt, J. S. Ro, C. V. Thompson, and J. Melngailis, J. Vac. Sci. Technol. B 7, 1816 (1989).
241. A. D. Della Ratta, J. Melngailis, and C. V. Thompson, J. Vac. Sci. Technol. B 11, 2195 (1993).
242. J. Funatsu, C. V. Thompson, and J. Melngailis, J. Vac. Sci. Technol. B 14, 179 (1996).
243. J. Melngailis, in Handbook of VLSI Microlithography, edited by W. B. Glendinning and J. N. Helbert (Noyesce, Park Ridge, NJ, 1991).
244. H. Lezec, C. R. Musil, J. Melngailis, L. J. Mahoney, and J. D. Woodhouse, J. Vac. Sci. Technol. B 9, 2709 (1991).
245. D. Vignaud, S. Etchin, K. S. Liao, C. R. Musil, D. A. Antoniadis, and J. Melngailis, Appl. Phys. Lett. 60, 2267 (1992).
246. R. H. Walden, A. E. Schmitz, L. E. Larson, A. R. Kramer, and J. Pasiecznik, Proceedings of the IEEE Custom Integrated Circuits Conference (IEEE, Piscataway, NJ, 1988), p. 18.7.1.
247. H. Lezec, K. Ismail, L. J. Mahoney, M. I. Shepard, D. A. Antoniadis, and J. Melngailis, IEEE Electron Device Lett. 9, 476 (1988).
248. A. Chu, L. Chu, W. Macropoulos, K. Khair, R. Patel, M. Cordro, H. J. Lezec, J. Melngailis, and L. J. Mahoney, 1991 IEEE MTT-S International Microwave Symposium Digest (IEEE, Piscataway, NJ, 1991), p. 1179.
249. A. L. Lattes, S. C. Munroe, M. M. Sesaver, J. E. Murguia, and J. Melngailis, IEEE Trans. Electron Devices 38, 1772 (1992).
250. J. E. Murguia, M. I. Shepard, J. Melngailis, A. L. Lattes, and S. C. Munroe, J. Vac. Sci. Technol. B 9, 2714 (1991).
251. J. Murguia, Ph.D. thesis, Massachusetts Institute of Technology.
252. A. F. Evason, J. R. A. Cleaver, and H. Ahmed, IEEE Electron Device Lett. 9, 281 (1988); A. F. Evason, J. R. A. Cleaver, and H. Ahmed, J. Vac. Sci. Technol. B 6, 1832 (1988).
253. A. F. Evason, J. R. A. Cleaver, and H. Ahmed, IEEE Electron Device Lett. 9, 281 (1988); A. F. Evason, J. R. A. Cleaver, and H. Ahmed, J. Vac. Sci. Technol. B 6, 1832 (1988).
254. For a review of focused ion beam lithography, see J. Melngailis, Nucl. Instrum. Methods Phys. Res. B 80/81, 1271 (1993).
255. Ch. Wilbertz, Th. Maisch, D. Huttner, K. Bohringer, K. Jousten, and S. Kalbitzer, Nucl. Instrum. Methods Phys. Res. B 63, 120 (1992).