Semiconductor applications of plasma immersion ion implantation

Plasma Physics and Controlled Fusion

Volumn 45, Issue 5, 2003, Pages 555-570

  Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

BLUE LIGHT EMITTING MATERIALS; PLASMA IMMERSION ION IMPLANTATION; TRENCH DOPING;

PLASMA THEORY;

EID: 0038697891     PISSN: 07413335     EISSN: None     Source Type: Journal    
DOI: 10.1088/0741-3335/45/5/304     Document Type: Article

References (58)

1. Conrad J R, Radtke J L, Dodd R A, Worzala F J and Tran N C 1987 Plasma source ion implantation technique for surface modification of materials J. Appl. Phys. 62 4591
2. Mantese J V, Brown I G, Cheung N W and Collins G A 1996 Plasma immersion ion implantation MRS Bull. 21 52
3. Chu P K, Qin S, Chan C, Cheung N W and Larson L A 1996 Plasma immersion ion implantation-a fledgling technique for semiconductor processing Mater Sci. Eng. Rep. 17 207
4. Chu P K, Cheung N W and Chan C 1996 Recent applications of plasma immersion ion implantation Semicond. Int. 6 165
5. Mizuno B, Nakayama I, Aoi N, Kubota M and Komeda T 1988 New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma Appl. Phys. Lett. 53 2059
6. Cheung N W 1996 Plasma immersion ion implantation for semiconductor processing Mater. Chem. Phys. 46 132
7. Cheung N 2002 Processing considerations with plasma immersion ion implantation Surf. Coat. Technol. 156 24
8. 3 plasma immersion ion implantation J. Vac. Sci. Technol. B 12 956
9. Mizuno B, Nakaoka H, Takase M, Hori A, Nakayama I and Ogura M 1995 Plasma doping and plasma-less doping of semiconductor Ext. Abstr. 1995 Int. Conf. on Solid State Devices and Materials (Osaka, Japan) p 1041
10. Chapek D L, Conrad J R, Matyi R J and Felch S B 1994 Structural characterization of plasma-doped silicon by high resolution x-ray characterization J. Vac. Sci. Technol. B 12 951
11. Qin S and Chan C 1994 Plasma immersion ion implantation doping experiments for microelectroncis J. Vac. Sci. Technol. B 12 962
12. Sheng T, Felch S B and Cooper C B 1994 Characteristics of a plasma doping system for semiconductor device fabrication J. Vac. Sci. Technol. B 12 969
13. Matyi R J, Chapek D L, Brunco D P, Felch S B and Lee B S 1997 Boron doping of silicon by plasma source ion implantation Surf. Coat. Technol. 93 247
14. Shao J, Jones E C and Cheung N W 1997 Shallow junction formation by plasma immersion ion implantation Surf. Coat. Technol. 93 254
15. Goeckner M J, Felch S B, Weeman J, Mehta S and Reedholm J S 1999 Evaluation of charging damage test structures for ion implantation processes J. Vac. Sci. Technol. A 17 1501
16. Goeckner M J, Felch S B, Fang Z, Lenoble D, Galvier J, Grouillet A, Yeap G C-R, Bang D and Lin M-R 1999 Plasma doping for shallow junctions J. Vac. Sci. Technol. B 17 2290
17. Felch S B, Fang Z, Woo B W, Liebert R B, Walther S R and Hacker D 2002 Plasma doping for the fabrication of ultra-shallow junctions Surf. Coat. Technol. 156 229
18. Lenoble D and Grouillet A 2002 The fabrication of advanced transistors with plasma doping Surf. Coat. Technol. 156 262
19. Min J, Chu P K, Cheng Y C, Liu J B, Im S, Iyer S and Cheung N W 1995 Buried oxide formation by plasma immersion ion implantation Mater. Chem. Phys. 40 219
20. Liu J B, Iyer S K, Hu C M, Cheung N W, Gronsky R, Min J and Chu P K 1995 Formation of buried oxide in silicon using separation by plasma implantation of oxygen (SPIMOX) Appl. Phys. Lett. 67 2361
21. Min J, Chu P K, Cheng Y C, Liu J, Iyer S S and Cheung N W 1996 Nucleation mechanism of SPIMOX (separation by plasma implantation of oxygen) Surf. Coat. Technol. 85 60
22. Chu P K, Lu X, Iyer S S K and Cheung N W 1997 A new way to make SOI wafers Solid State Technol. 40 S9
23. Lu X, Iyer S S K, Liu J B, Hu C M, Cheung N W, Min J and Chu P K 1997 Separation by plasma implantation of oxygen to form silicon on insulator Appl. Phys. Lett. 70 1748
24. Iyer S S K, Lu X, Liu J B, Min J, Fan Z, Chu P K, Hu C M and Cheung N W 1997 Separation by plasma implantation of oxygen (SPIMOX) operational phase space IEEE Trans. Plasma Sci. 25 1128
25. Lu X, Cheung N W, Strathman M D, Chu P K and Doyle B 1997 Hydrogen induced silicon surface layer cleavage Appl. Phys. Lett. 71 1804
26. Lu X, Iyer S S K, Hu C M, Cheung N W, Min J, Fan Z N and Chu P K 1997 Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation Appl. Phys. Lett. 71 2767
27. Chu P K, Qin S, Chan C, Cheung N W and Ko P K 1998 Instrumental and process considerations for the fabrication of silicon-on-insulator (SOI) structures by Plasma Immersion Ion Implantation IEEE Trans. Plasma Sci. 26 79
28. Lu X, Iyer S S K, Lee J, Doyle B, Fan Z N, Chu P K, Hu C M and Cheung N W 1998 Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut J. Electron. Mater. 27 1059
29. Chu P K and Cheung N W 1998 Microcavity engineering by plasma immersion ion implantation Mater. Chem. Phys. 57 1
30. Yu C and Cheung N W 1994 Trench doping conformality by plasma immersion ion implantation (PIII) IEEE Electron. Dev. Lett. 15 196
31. Bernstein J D, Qin S, Chan C and King T J 1995 Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation IEEE Electron. Dev. Lett. 16 421
32. Fan Z, Zhao G, Chu P K, Jin Z, Kwok H S and Wong M 1998 Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium Appl. Phys. Lett. 73 360
33. Qin S, Zhou Y Z, Chan C and Chu P K 1998 Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation IEEE Electron Dev. Lett. 19 420
34. Ho A H P, Kwok D T K, Zeng X C, Chan C and Chu P K 2001 Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing Surf. Coat. Technol. 136 142
35. Lee K December 2001 Plasma immersion ion implantation as an alternative doping technology for ULSI Ext. Absr. Int. Workshop Junction Technol. (Tokyo, Japan) p 21
36. Chu P K, Felch S B, Kellerman P, Sinclair F, Larson L A and Mizuno B 1999 Plasma doping: progress and potential (part 1) Solid State Technol. 42 55
37. Chu P K, Felch S B, Kellerman P, Sinclair F, Larson L A and Mizuno B 1999 Plasma doping: progress and potential (part 2) Solid State Technol. 42 77
38. Bruel M et al 1995 Smart-cut®: a promising new soi material technology 1995 IEEE Int. SOI Conf. Proc. (Tucson, Arizona) p 178
39. Feng L, Bryan M, En W, Lam A, Holm I, Malik I and Current M 1999 5th Plasma-Based Ion Implantation Workshop (Kyoto, Japan) paper O-02
40. Tong Q Y, Gutiahr K, Hopfe S, Gosele U and Lee T H 1999 Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates Appl. Phys. Lett. 70 1390
41. Freund L B 1999 A lower bound on implant density to induce wafer splitting in forming compliant substrate substrates Appl. Phys. Lett. 70 3519
42. Chu P K and Zeng X 2001 Hydrogen induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation J. Vac. Sci. Technol. A 19 2301
43. Chu P K, Fu R K Y, Zeng X C and Kwok D T K 2001 Metallic contamination in hydrogen plasma immersion ion implantation of silicon J. Appl. Phys. 90 3743
44. Fan Z, Chu P K, Cheung N W and Chan C 1999 Thickness uniformity of silicon-on-insulator fabricated by plasma immersion ion implantation and ion cut IEEE Tran. Plasma Sci. 27 633
45. Wang L W, Fu R K Y, Zeng X C, Chu P K, Cheung W Y and Wong S P 2001 Damage in hydrogen plasma implanted silicon J. Appl. Phys. 90 1735
46. 3 plasma doping Surf. Coat. Technol. 136 146
47. Tian X B, Tang B Y and Chu P K 2000 Modeling of incident particle energy distribution in plasma immersion ion implantation J. Appl. Phys. 88 4961
48. Tian X B, Tang B Y and Chu P K 1999 Accurate determination of pulsed current waveform in plasma immersion ion implantation processes J. Appl. Phys. 86 3567
49. Fan Z, Chen Q C, Chu P K and Chan C 1998 Low pressure plasma immersion ion implantation of semiconductors IEEE Trans. Plasma Sci. 26 1661
50. Kwok D T K, Zeng X C, Chan C and Chu P K 2000 Direct current plasma implantation using a grounded conducting grid J. Appl. Phys. 87 4094
51. Zeng X C, Chu P K, Chen Q C and Tong H H 2001 Steady-state direct-current plasma immersion ion implantation using an electron cyclotron resonance plasma source Thin Solid Films 390 145
52. Zeng X C, Fu R K Y, Kwok D T K and Chu P K 2001 Quasi-DC (direct current) plasma immersion ion implantation Appl. Phys. Lett. 79 3044
53. Zeng X C, Tong H H, Fu R K Y, Chu P K, Xu Z J and Chen Q C 2001 Steady-state direct-current plasma immersion ion implantation using a multi-polar magnetic field electron cyclotron resonance (ECR) plasma source J. Vac. Sci. Technol. A 19 2889
54. Kwok D T K, Chu P K, Wood B P and Chan C 1999 Particle-in-cell and Monte-Carlo simulation of the hydrogen plasma immersion ion implantation process J. Appl. Phys. 86 1817
55. Ziegler J F, Biersack J P and Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon)
56. Tong H H, Fu K Y, Zeng X C, Kwok D T K and Chu P K 2002 Enhancement of implantation efficiency by grid biasing in radio frequency (RF)-inductively coupled plasma (ICP) direct-current (DC) plasma immersion ion implantation J. Vac. Sci. Technol. B 20 1452
57. Anders A ed 2001 Handbook of Plasma Immersion Ion Implantation and Deposition (New York: Wiley) p 29
58. Cerofolini G F, Meda L, Balboni R, Corni F, Frabboni S, Ottaviani G, Tonini R, Anderle M and Canteri R 1992 Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon Phys. Rev. B 46 2061