Boron diffusion in amorphous silicon and the role of fluorine

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4283-4285

  Duffy, R ^a   Venezia, V C ^a   Heringa, A ^a   Pawlak, B J ^a   Hopstaken, M J P ^a   Maas, G C J ^a   Tamminga, Y ^a   Dao, T ^a   Roozeboom, F ^a   Pelaz, L ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS SILICON; ANNEALING; BORON; COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTALLIZATION; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); FLUORINE; GERMANIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

DIFFUSIVITY; RUTHERFORD BACKSCATTERING (RBS) CHANNELING MEASUREMENTS; THERMAL ANNEALING; ULTRASHALLOW JUNCTIONS;

CRYSTALLINE MATERIALS;

EID: 2942637993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1751225     Document Type: Article

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