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Volumn 86, Issue 10, 2005, Pages 1-3

Mechanisms of B deactivation control by F co-implantation

d IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; ION IMPLANTATION; POINT DEFECTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SUPERSATURATION;

B DEACTIVATION; PREAMORPHIZATION; RAPID THERMAL PROCESSING (RTP); SOLID-PHASE EPITAXY;

CMOS INTEGRATED CIRCUITS;

EID: 17944374217 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1870131 Document Type: Article

Times cited : (76)

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