Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment

Surface Science

Volumn 550, Issue 1-3, 2004, Pages 185-191

  Dev, Kapil ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Ion bombardment; Semiconductor semiconductor interfaces; Silicon; Silicon oxides; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; ELECTRIC CURRENT MEASUREMENT; ION BOMBARDMENT; LASER APPLICATIONS; MICROELECTRONICS; OXIDATION; PARAMAGNETIC RESONANCE; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION; X RAY ANALYSIS;

SEMICONDUCTOR-SEMICONDUCTOR INTERFACES; SURFACE ELECTRONIC PHENOMENA; SURFACE POTENTIALS; SURFACE STATES; WORK FUNCTIONS (WF);

SILICA;

EID: 0942289528     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.12.018     Document Type: Article

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