Ramp-rate effects on transient enhanced diffusion and dopant activation

Journal of the Electrochemical Society

Volumn 150, Issue 12, 2003, Pages

  Jung, M Y L ^a   Gunawan, R ^a   Braatz, R D ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRON ENERGY LEVELS; ION IMPLANTATION; MATHEMATICAL MODELS; MAXIMUM LIKELIHOOD ESTIMATION; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DISSOCIATION ENERGY; DOPANT; RAMP-RATE EFFECT; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTOR JUNCTIONS;

EID: 0347651393     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1627354     Document Type: Article

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