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Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

Stressed multidirectional solid-phase epitaxial growth of Si

(5) Rudawski, N G a Jones, K S a Morarka, S a Law, M E a Elliman, R G b

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SI; CRYSTALLOGRAPHIC ORIENTATIONS; DEVICE PROCESSING; EDGE DEFECTS; EPITAXIAL CRYSTALLIZATIONS; EPITAXIAL RECRYSTALLIZATION; EXTERNAL STRESS; GROWTH FRONTS; GROWTH INTERFACES; IN LINES; LINE STRUCTURES; MULTI-DIRECTIONAL; SI SUBSTRATES; SI WAFERS; SI-BASED DEVICES; SOLID-PHASE; SOLID-PHASE EPITAXIAL GROWTHS; SOLID-PHASE EPITAXIAL REGROWTHS; SOLID-PHASE EPITAXIES; WAFER BENDING;

AMORPHOUS SILICON; CRYSTAL GROWTH; GROWTH KINETICS; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES;

EPITAXIAL GROWTH;

EID: 65449185783 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3091395 Document Type: Review

Times cited : (40)

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