Ion-beam-defect processes in group-III nitrides and ZnO

Vacuum

Volumn 73, Issue 1, 2004, Pages 93-104

  Kucheyev, S O ^a   Williams, J S ^b   Jagadish, C ^b  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Amorphization; Blistering; Defects; GaN; Ion implantation; Isolation; ZnO

Indexed keywords

AMORPHIZATION; ANNEALING; COMPLEXATION; CRYSTAL DEFECTS; DECOMPOSITION; ETCHING; GALLIUM NITRIDE; HEAVY IONS; INTERPOLATION; ION BOMBARDMENT; NITRIDES; SATURATION (MATERIALS COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

BLISTERING; ION-BEAM DEFECT PROCESSES; ISOLATION;

ION IMPLANTATION;

EID: 1142268130     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.032     Document Type: Conference Paper

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