Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 290-293

  Bennett, N S ^a   Cowern, N E B ^a   Kheyrandish, H ^b   Paul, S ^c   Lerch, W ^c   Smith, A J ^d   Gwilliam, R ^d   Sealy, B J ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b CSMA MATS   (United Kingdom)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; SEMICONDUCTING SILICON;

BORON IMPLANTATIONS; BULK SILICONS; DEVICE GENERATIONS; LOW THERMAL BUDGETS; NEW STUDIES; VACANCY ENGINEERINGS;

VACANCIES;

EID: 58049131433     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681755     Document Type: Conference Paper

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