Ultra-shallow junction formation by B18H22 ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 25-29

  Kawasaki, Y ^a   Kuroi, T ^a   Yamashita, T ^a   Horita, K ^a   Hayashi, T ^a   Ishibashi, M ^a   Togawa, M ^b   Ohno, Y ^a   Yoneda, M ^a   Horsky, Tom ^c   Jacobson, Dale ^c   Krull, Wade ^c  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Semiconductor Engineering Corp   (Japan)

^c Ceradyne Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; VAPORS;

BORON CLUSTERS; GATE LENGTH; IMPLANTERS; SHEET RESISTANCE;

BORON COMPOUNDS;

EID: 23444461954     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.073     Document Type: Conference Paper

References (4)

1. K. Goto, J. Matsuo, T. Sugii, H. Minakata, I. Yamada, T. Hisatsugu, in: Tech. Dig. IEEE IEDM, Washington, DC, 1996, p. 435.
2. D.C. Jacobson, K. Bourdelle, H.-J. Gossmann, M. Sosnowski, M.A. Albano, V. Babaram, J.M. Poate, A. Agarwal, A. Perel, T. Horsky, in: IEEE Proceedings of the 13th International Conference of Ion Implantation Technology (Austria), 2000, p. 300.
3. A. Perel, W. Krull, D. Hoglund, in: IEEE Proceedings of the 13th International Conference of Ion Implantation Technology (Austria) 2000 304.
4. S. Umisedo, N. Hamamoto, S. Sakai, M. Tanjyo, N. Nagai, M. Naito, in: Extended abstracts of the 4th International Workshop on Junction Technology (Shanghai) (2004) 27.