Diffusion mechanisms and intrinsic point-defect properties in silicon

MRS Bulletin

Volumn 25, Issue 6, 2000, Pages 22-27

  Bracht, Hartmut ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; POINT DEFECTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMODYNAMIC PROPERTIES;

TRANSIENT-ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0033748254     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2000.94     Document Type: Article

References (30)

1. P.M. Fahey, P.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61 (1989) p. 289.
2. S.M. Hu, Mater. Sci. Eng. R13 (1994) p. 105.
3. H. Bracht, E.E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81 (1998) p. 393.
4. N.A. Stolwijk and H. Bracht, in Diffusion in Semiconductors and Non-Metallic Solids, Landolt-Börnstein New Series, Vol. III/33, Subvolume A: Diffusion in Semiconductors, edited by D.L. Beke (Springer-Verlag, Berlin, 1998) and references therein.
5. J.W. Corbett, R.S. McDonald, and G.D. Watkins, J. Phys. Chem. Solids 25 (1964) p. 873.
6. G.D. Watkins, J.W. Corbett, and R.S. McDonald, J. Appl. Phys. 53 (1982) p. 7097.
7. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23 (1980) p. 361.
8. F. Morehead, N.A, Stolwijk, W. Meyberg, and U. Gösele, Appl. Phys. Lett. 42 (1983) p. 690.
9. H. Bracht, N.A. Stolwijk, and H. Mehrer, Phys. Rev. B 52 (1995) p. 16542.
10. N.A. Stolwijk, Phys. Rev. B. 42 (1990) p. 5793.
11. M. Yoshida and E. Arai, Jpn. J. Appl. Phys. 35 (1996) p. 44.
12. M. Uematsu, J. Appl. Phys. 82 (1997) p. 2228.
13. P. Fahey, S.S. Iyer, and G.J. Scilla, Appl. Phys. Lett. 54 (1989) p. 843.
14. H.-J. Gossmann, T.E. Haynes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate, H.S. Luftman, T.K. Mogi, and M.O. Thompson, Appl. Phys. Lett. 71 (1997) p. 3862.
15. P. Fahey, G. Barbuscia, M. Moslehi, and R.W. Dutton, Appl. Phys. Lett. 46 (1985) p. 784.
16. N.E.B. Cowern, J. Appl. Phys. 64 (1988) p. 4484.
17. A. Ural, P.B. Griffin, and J.D. Plummer, Appl. Phys. Lett. 73 (1998) p. 1706.
18. A. Giese, H. Bracht, N.A. Stolwijk, and J.T. Walton, J. Appl. Phys. 83 (1998) p. 8062.
19. A. Giese, H. Bracht, N.A. Stolwijk, and D. Baither, Mater. Sci. Eng., B 71 (2000) p. 160.
20. H. Bracht, Proc. Electrochem. Soc. 99-1 (1999) p. 357.
21. H. Bracht, Physica B 273-274 (1999) p. 981.
22. W. Shockley and J.L. Moll, Phys. Rev. 119 (1960) p. 1480.
23. K.P. Chik, Radiat. Eff. 4 (1970) p. 33.
24. H. Bracht, Defect Diffusion Forum 143-147 (1997) p. 979.
25. A. Nylandsted Larsen, K. Kyllesbech Larsen, P.E. Andersen, and B.C. Svensson, J. Appl. Phys. 73 (1993) p. 691.
26. R.B. Fair, in Impurity Doping Processes in Silicon, edited by F. Wang (North Holland, Amsterdam, 1981) p. 315.
27. A. Nylandsted Larsen, P. Kringhoj, J. Lundsgaard Hansen, and S.Yu. Shiryaev, J. Appl. Phys. 81 (1997) p. 2173 and references therein.
28. G.D. Watkins, J.R. Troxell, and A.P. Charterjee, in Inst. Phys. Conf. Ser. No. 46 (Institute of Physics, New York, 1979) p. 16.
29. A. Seeger and K.P. Chik, Phys. Status Solidi 29 (1968) p. 455.
30. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraíz, J.M. Poate, H.S. Luftman, and T.E. Haynes, J. Appl. Phys. 81 (1997) p. 6031.