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Applied Physics A: Materials Science and Processing

Volumn 76, Issue 7, 2003, Pages 1025-1033

Extended defects in shallow implants

(7) Claverie, A a Colombeau, B a De Mauduit, B a Bonafos, C a Hebras, X a,b Ben Assayag, G a Cristiano, F b

a CEMES CNRS (France)

b LAAS CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; SILICON;

SHALLOW IMPLANTS;

ION IMPLANTATION;

EID: 0037744553 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1944-0 Document Type: Review

Times cited : (136)

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