Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

Journal of Crystal Growth

Volumn 310, Issue 2, 2008, Pages 324-335

  Kulkarni, Milind S ^a  

^a MEMC Electronic Materials   (United States)

Author keywords

A1. Defects; A1. Impurities; A1. Microdefects; A1. Nucleation; A1. Point defects; A2. Czhochralski method; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLOGRAPHY; CRYSTALS; NITROGEN; NUCLEATION; OXYGEN; SEMICONDUCTING SILICON;

CRYSTALLOGRAPHIC IMPERFECTIONS; CZHOCHRALSKI METHOD; MICRODEFECTS; SILICON CRYSTALS;

CRYSTAL DEFECTS;

EID: 37449030178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.019     Document Type: Article

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