Advanced thermal processing of semiconductor materials in the msec-range

13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005

Volumn , Issue , 2005, Pages 53-71

  Skorupa, W ^a   Yankov, R A ^a   Voelskow, M ^a   Anwand, W ^a   Panknin, D ^a   McMahon, R A ^b   Smith, M ^b   Gebel, T ^c   Rebohle, L ^c   Fendler, R ^d   Hentsch, W ^d  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Nanoparc GmbH   (Germany)

^d FHR GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FILMS; GROWTH (MATERIALS); INTERNET PROTOCOLS; MICROELECTRONIC PROCESSING; NONMETALS; PLASMAS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

CRYSTALLIZATION OF AMORPHOUS SILICONS; CUBIC SILICON CARBIDES; FLASH LAMP ANNEALING; HETEROEPITAXIAL GROWTHS; MATERIALS PROCESSING; SHALLOW JUNCTIONS; THERMAL PROCESSING;

SEMICONDUCTOR MATERIALS;

EID: 48349111011     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2005.1613684     Document Type: Conference Paper

References (47)

1. N. Acharya, P. Timans, "Fundamental issues in millisecond annealing, Electrochem. Soc. Proc. vol. 2004-01 (2004), p. 11 -18
2. R.L. Cohen, J.S. Williams, L.C. Feldman and K.W. West, "Thermally assisted flash annealing of silicon and germanium", Appl. Phys. Letts., vol. 33 (1978), p. 751 MATT1
3. A.R. Kirkpatrick, "Apparatus involving pulsed electron beam processing of semiconductor devices", Patent number US4082958, Publ. date 1978-04-04
4. R. Klabes, J. Matthai, M. Voelskow, G.A. Kachurin, E.V. Nidaev and H. Bartsch, "Flash lamp annealing of arsenic implanted silicon", Phys. Stat. Sol. A, vol. 66 (1981), p. 261
5. K.-H. Heinig, K. Hohmuth, R. Klabes, M. Voelskow and H. Woittennek, "Flash lamp annealing of ion implanted silicon", Rad. Eff. and Defects Sol., vol. 63 (1982), p. 115
6. D. Panknin, E. Wieser, R. Klabes and H. Syhre, .,Dose dependence of the flash lamp annealing of arsenic-implanted silicon", Phys. Stat. Sol. A, vol. 77 (1983), p. 553
7. E. Wieser, H. Syhre, F.G. Rudenauer and W. Steiger, "Influence of flash-lamp annealing on the diffusion behavior of ion-implanted boron profiles", Phys. Stat. Sol. A, vol. 81 (1984), p. 247
8. T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama and T. Kusuda, "Flash Lamp Anneal Technology for Effectively Activating Ion Implanted Si", in Ext. Abstr., Int. Conference on Soild State Devices and Materials, Tokyo (2001), p. 182
9. W. Skorupa W, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey and E.A. Arevalo, "Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing", J. Electrochem. Soc., vol. 152 (2005), G436-G440
10. W. Skorupa, R.A. Yankov, W. Anwand, M. Voelskov, T. Gebel, F.F. Downey and E.A. Arevalo, "Ultra-shallow junctions produced by plasma doping and flash lamp annealing", Mater. Sci. Eng. B, vol. 114 (2004), p. 358
11. K.T. Nishikora, T. Ito and K. Suguro, "Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing", IEEE Trans. Semicon. Manufact., vol. 17 (2004), p. 286
12. T. Ito, K. Suguro, M. Tamura, T. Taniguchi, Y. Ushiku, T. Iinuma, I. Itani, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama and T. Kusuda, "Low-resistance ultrashallow extension formed by optimized flash lamp annealing", IEEE Trans. Semicon. Manufact., vol. 16 (2004), p. 417
13. T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda, "10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing" Jpn. J. Appl. Phys., vol. 41 (2002), p 2394
14. T. Gebel, M. Voelskow, W. Skorupa, G. Manino, V. Priviters, F. Priolo, E. Napolitani and A. Camera, "Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon", Nucl. Instr. and Meth. Phys. Res., vol. 186 (2002), p. 287
15. G. Ferro, D. Panknin, E.K. Polychroniadis, Y. Monteli, W. Skorupa and J. Stoemenos, "Microstructural characterization of 3C-SiC thin films grown by flash lamp induced liquid phase epitaxy", Mater. Sci. Forum, vol 483 (2005), p. 295
16. W. Skorupa, D. Panknin, W. Anwand, M. Voelsov, G. Ferro, Y. Monteli, A. Laycuras, J. Pezoldt, R. Mc Mahon, M. Smith, J. Camassel, J. Stoemenos, E. Polychroniadis, N. Mestres, D. Turover, S. Rushworth and A. Friedberger, "Flash Lamp Supported Deposition of 3C-SiC (FLASiC) - a promising technique to produce high quality cubic SiC layers", Mater. Sci. Forum, vol. 457-460 (2004), p. 175
17. G. Ferro, D. Panknin, J. Stoemenos, C. Balloud, J. Camassel, E. Polychroniadis, Y. Monteli and W. Skorupa, "Investigation of thick 3C-SiC films re-grown on thin 35 nm flash lamp annealed 3C-SiC", Mater. Sci. Forum, vol. 457-460, Part 1&2 (2004), p. 313
18. J. Stoemenos, D. Panknin, M. Eickhoff, V. Heera and W. Skorupa, "Improved 3C-SiC films epitaxially grown on Si by flash lamp processing" J. Electrochem. Soc., vol. 15 (2004), G136-G143
19. D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, M. Voelskow and W. Skorupa, "The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si", Appl. Surf. Sci., vol. 184 (2001), p. 377
20. W. Anwand, G. Brauer, D. Panknin and W. Skorupa, "Ion implantation induced defects in 6H-SiC and their annealing behaviour", Mater. Sci. Forum, vol. 363-3 (2001), p. 442
21. D. Panknin, H. Wirth, A. Mücklich and W. Skorupa, "Electrical and microstructural properties of highly boron-implantation doped 6H-SiC", J. Appl. Phys., vol. 89 (2001), p. 3162
22. D. Panknin, T. Gebel and W. Skorupa, "Flash lamp annealing of implantation doped p-and n-type 6H-SiC", Mater. Sci. Forum, vol. 353-3 (2000), p. 587
23. B. Pécz, L. Dobos, D. Panknin, W. Skorupa, C. Lioutas and N. Vouroutzis, "Crystallization of amprphous Si films by flash lamp annealing", Appl. Surf. Sci., vol. 242 (2005), p. 185
24. A. Usami, H. Nishioka and Y. Inoue, "Optimum flash lamp annealing conditions for fabrication of low dose ion-implanted Si solar cells", IEEE Electr. Device Letts., vol. EDL-5, (1984), p. 186.
25. 3 (PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices", Jpn. J. Appl. Phys. 1, Regular Papers, Short Notes, Review Papers, vol. 41 (2002), p. 2630
26. T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota, "Atomic-order thermal nitridation of Si(100) and subsequent growth of Si", J. Vac. Sci. Technol. A, vol. 19 (2001) 1907
27. R.L. Bates, C. Da Via, S. D'Auria, V. O'Shea, C. Raine and K.M. Smith, "The effects of radiation on gallium arsenide radiation detectors", Nucl. Instr.and Meth. Phys. Res. A, vol. 395 (1997), p. 54
28. 2 structures fabricated by focused ion beam implantation and local flash lamp melting", Nucl. Instr. and Meth. Phys. Res. B, vol. 112 (1996), p. 201
29. + ionimplanted InP", Appl. Phys. A, vol 53 (1991), p. 102
30. J. Niess, S. Paul, S. Buschbaum, P. Schmid and W. Lerch, "Mainstream rapid thermal processing for source-drain engineering from first applications to latest results", Mater. Sci. Eng. B, vol. 114 (2004) 141
31. International Technology Roadmap for Semiconductors 2004 Update; Semiconductor Industry Association, 4300 Stevens Creek Blvd, San Jose, CA 95129 (http://public.itrs.net)
32. S.B. Felch, Z. Fang, B.-W. Koo, R.B. Liebert, S.R. Walther and D. Hacker, "Plasma doping fort he fabrication of ultra-shallow junctions", Surf. Sci. Technol., vol. 156 (2002), p. 229.
33. M.J. Goeckner, S.B. Felch, Z. Fang, D. Lenoble, J. Galvier, A. Grouillet, G.C.-F. Yeap, D. Bang and M.-R. Lin, "Plasma doping for shallow junctions", J. Vac. Sci. Technol. B, vol. 17 (1999), p. 2290.
34. P.K. Chu, "Recent developments and applications of plasma immersion ion implantation", J. Vac. Sci. Technol. B, vol. 22 (2004), p. 289
35. R. Conrad, J.L. Radtke, R.A. Dodd, F.J. Worzala and N.C. Tran, Plasma source ion-implantation technique for surface modification of materials", J. Appl. Phys., vol. 62 (1987), p. 4591
36. st Electrochem. Soc. Meeting, Symp. Q1 Rapid Thermal and Other Short-Time Processing Technologies III, May 12-17 (2002), paper 735
37. V.E. Chelnokov, A.L. Syrkin and V.A. Dmitriev, "Overview of SiC power electronics", Diamond Related Mater., vol. 6 (1997) 1480
38. M. Smith, R.A. McMahon, M. Voelskow, W. Skorupa and J. Stoemenos, "Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates", J. Cryst. Growth, vol. 277 (2005), p. 162
39. M. Smith, R. McMahon, M. Voelskow, W. Skorupa, "Modelling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures", J. Appl. Phys., vol. 96 (2004), p. 4843
40. H.N. Jayatirtha and M.G. Spencer, "Sublimation growth of bulk beta-SiC crystals on (100) and (111)beta-SiC substrates", Mat. Sci. Forum, vol. 264-268 (1998), p. 77
41. M. Voelskow, M. Smith, R. McMahon and W. Skorupa, "Homogenization of the melting depth in SiC on Si structures during flash lamp annealing", excepted for APL.
42. M. Voelskow, M. Smith, R. McMahon, W. Skorupa and J. Stoemenos, "Process control and melt depth homogenisation for SiC on Si structures during flash lamp irradiation" (to be published)
43. M. Miyasaka and J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase-crystallized silicon films", J. Appl. Phys., vol. 86 (1999), p. 5556
44. J.S. Im, H.J. Kim and M.O. Thompson, "Phase-transformation mechanisms involved in excimer-laser crystallization of amorphoussilicon films", Appl. Phys. Letts., vol. 63 (1993), p. 1969
45. B. Pecz, L. Dobos, D. Panknin, W. Skorupa, C. Lioutas and N. Vouroutzis, "Crystallization of amorphous Si films by flash lamp annealing", Appl. Surf. Sci., vol. 242 (2005), p. 185
46. M. Smith, R. McMahon, M. Voelskow, D. Panknin and W. Skorupa, "Modelling of flash lamp induced crystallization of amorphous silicon thin films on glass", J. Cryst. Growth (in print)
47. C. Spinella, S. Lombardo and F. Priolo, "Crystal grain nucleation in amorphous silicon", J. Apply. Phys., vol. 84 (1998), p. 5383.