Erratum to "Atomistic examinations of the solid phase epitaxial growth of silicon" [J. Cryst. Growth 311 (2009) 3195-3203] (DOI:10.1016/j.jcrysgro.2009.02.050);Atomistic examinations of the solid-phase epitaxial growth of silicon

Journal of Crystal Growth

Volumn 311, Issue 11, 2009, Pages 3195-3203

  Gillespie, B A ^a   Wadley, H N G ^a  

^a University of Virginia   (United States)

Author keywords

A1. Computer simulation; A1. Recrystallization; A3. Solid phase epitaxy

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CRYSTALLINE MATERIALS; DISTRIBUTION FUNCTIONS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; MOLECULAR DYNAMICS; TEMPERATURE;

AMORPHOUS SILICON LAYERS; AMORPHOUS-TO-CRYSTALLINE TRANSITION; CRYSTALLINE INTERFACES; CRYSTALLINE SILICON SUBSTRATES; MOLECULAR DYNAMICS SIMULATIONS; RADIAL DISTRIBUTION FUNCTIONS; SOLID PHASE EPITAXIAL GROWTH; SOLID PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 65849456992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.039     Document Type: Erratum

References (31)

1. Bean J.C. Semiconductors and Semimetals 56 (1999) 1
2. Olson G.L., and Roth J.A. Mater. Sci. Rep. 3 (1988) 1
3. Motooka T. Mater. Sci. Eng. A 253 (1998) 42
4. Priolo F., and Rimini E. Mater. Sci. Rep. 5 (1990) 319
5. Kinomura A., Williams J.S., and Fujii K. Phys. Rev. B 59 (1999) 15214
6. Bernstein N., Aziz M.J., and Kaxiras E. Phys. Rev. B 61 (2000) 6696
7. Motooka T., Nisihira K., Munetoh S., Moriguchi K., and Shintani A. Phys. Rev. B 61 (2000) 8537
8. Weber B., Gartner K., and Stock D.M. Nucl. Instrum. Meth. Phys. Res. B 127/128 (1997) 239
9. Weber B., Stock D.M., and Gartner K. Nucl. Instrum. Meth. Phys. Res. B 148 (1999) 375
10. Stock D.M., Weber B., and Gartner K. Phys. Rev. B 61 (2000) 8150
11. Weber B., and Gartner K. Nucl. Instrum. Meth. Phys. Res. B 175 (2001) 119
12. Gartner K., and Weber B. Nucl. Instrum. Meth. Phys. Res. B 202 (2003) 255
13. Tersoff J. Phys. Rev. B 37 (1988) 6991
14. Bazant M.Z., Kaxiras E., and Justo J.F. Phys. Rev. B 56 (1997) 8542
15. Stillinger F.H., and Weber T.A. Phys. Rev. B 31 (1985) 5262
16. Otto G., Hobler G., and Gartner K. Nucl. Instrum. Meth. Phys. Res. B 202 (2003) 114
17. Gillespie B.A., Zhou X.W., Murdick D.A., Wadley H.N.G., Drautz R., and Pettifor D.G. Phys. Rev. B 75 (2007) 155207
18. Pettifor D.G., and Oleinik I.I. Phys. Rev. B 59 (1999) 8487
19. Pettifor D.G., and Oleinik I.I. Phys. Rev. Lett. 84 (2000) 4124
20. Liu P.L., Yen R., Bloembergen N., and Hodgson R.T. Appl. Phys. Lett. 34 (1979) 864
21. Pettifor D.G., and Oleinik I.I. Phys. Rev. B 65 (2002) 172103
22. Pettifor D.G., Oleinik I.I., Nguyen-Manh D., et al. Comp. Mat. Sci. 23 (2002) 33
23. Brodsky M.H., Title R.S., Weiser K., and Pettit G.D. Phys. Rev. B 1 (1970) 2639
24. Kemins T.I., Mandurah M.M., and Saraswat K.C. J. Electrochem. Soc. 125 (1978) 927
25. Roth J.A., and Anderson C.L. Appl. Phys. Lett. 31 (1977) 689
26. Mayer J.W., Eriksson L., and Davies J.A. Ion Implantation in Semiconductors (1970), Academic Press, New York
27. Brown W.L. Mater. Res. Soc. Symp. Proc. 51 (1985) 53
28. Lu G.Q., Nygren E., and Aziz M.J. J. Appl. Phys. 70 (1991) 5323
29. X.W. Zhou, The Nitrogen Strengthening Mechanism in the Single Crystalline Fe-Ni-Cr Austenitic Stainless Steels, Dissertation, Clemson University, 1995.
30. da Silva C.R.S., and Fazzio A. Phys. Rev. B 64 (2001) 075301
31. Private communication with Khristian Koharty at Oxford University (2006).