Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

Journal of Crystal Growth

Volumn 303, Issue 2, 2007, Pages 438-448

  Kulkarni, Milind S ^a  

^a MEMC Electronic Materials Inc   (United States)

Author keywords

A1. Defects; A1. Microdefects; A1. Nucleation; A1. Point defects; A2. Czhochralski method; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALLOGRAPHY; MICROELECTRONICS; NUCLEATION; OXYGEN; POINT DEFECTS; SEMICONDUCTING SILICON;

CRYSTALLOGRAPHIC IMPERFECTIONS; CZHOCHRALSKI METHOD; MICRODEFECTS;

CRYSTAL STRUCTURE;

EID: 34247216175     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.021     Document Type: Article

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