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Volumn 2, Issue , 2004, Pages 1032-1037

New mechanisms governing diffusion in silicon for transistor manufacture

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; INTERFACES (MATERIALS); ION IMPLANTATION; MAXIMUM LIKELIHOOD ESTIMATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON; SURFACE PHENOMENA;

EID: 21644467405     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (22)
  • 16
    • 21644472431 scopus 로고    scopus 로고
    • See Mark Law, http://www.swamp.tec.ufl.edu/
    • Law, M.1
  • 17
    • 21644447492 scopus 로고    scopus 로고
    • Pair diffusion and kick-out: Quantifying relative contributions to diffusion of boron in silicon
    • in press
    • M. Y. L. Jung, R. Gunawan, R. D. Braatz and E. G. Seebauer, "Pair Diffusion and Kick-out: Quantifying Relative Contributions to Diffusion of Boron in Silicon," AIChE J., in press.
    • AIChE J
    • Jung, M.Y.L.1    Gunawan, R.2    Braatz, R.D.3    Seebauer, E.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.