Effects of germanium and carbon coimplants on phosphorus diffusion in silicon

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Ku, K C ^a   Nieh, C F ^b   Gong, J ^b   Huang, L P ^a   Sheu, Y M ^a   Wang, C C ^a   Chen, C H ^a   Chang, H ^a   Wang, L T ^a   Lee, T L ^a   Chen, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DEFECTS; DIFFUSION; ELECTRON TRAPS; GERMANIUM; MONTE CARLO METHODS; REDUCTION; SILICON;

IMPLANT DEFECTS; PREAMORPHIZED LAYERS; SPIKE ANNEALS; TRANSIENT ENHANCED DIFFUSION;

PHOSPHORUS;

EID: 33748686196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2347896     Document Type: Article

References (8)

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