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Volumn 573-574, Issue , 2008, Pages 295-304
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Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping
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Author keywords
Activation; Boron; CMOS; Defect engineering; Diffusion; FinFET; SOI; Vacancy; Vacancy engineering
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Indexed keywords
BORON;
BUDGET CONTROL;
CHEMICAL ACTIVATION;
CMOS INTEGRATED CIRCUITS;
DIFFUSION;
FINFET;
METALLIC FILMS;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
VACANCIES;
BORON CONCENTRATIONS;
DEFECT ENGINEERING;
ELECTRICALLY ACTIVES;
IMPLANTATION DOPING;
LOW THERMAL BUDGET;
THIN SILICON FILMS;
ULTRA SHALLOW JUNCTION;
VACANCY ENGINEERING;
THERMAL ENGINEERING;
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EID: 45749117987
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.573-574.295 Document Type: Article |
Times cited : (3)
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References (12)
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