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Volumn 573-574, Issue , 2008, Pages 295-304

Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping

Author keywords

Activation; Boron; CMOS; Defect engineering; Diffusion; FinFET; SOI; Vacancy; Vacancy engineering

Indexed keywords

BORON; BUDGET CONTROL; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; DIFFUSION; FINFET; METALLIC FILMS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; VACANCIES;

EID: 45749117987     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.573-574.295     Document Type: Article
Times cited : (3)

References (12)
  • 4
    • 84901895812 scopus 로고    scopus 로고
    • N. E. B. Cowern, A.J. Smith, B. Colombeau, R. Gwilliam, B.J. Sealy, E.J.H. Collart: IEDM Tech. Dig. (2005), p. 39.1
    • N. E. B. Cowern, A.J. Smith, B. Colombeau, R. Gwilliam, B.J. Sealy, E.J.H. Collart: IEDM Tech. Dig. (2005), p. 39.1
  • 5
    • 85000267969 scopus 로고    scopus 로고
    • Detailed variants of this general concept are possible, for example in SOI, the vacancy-generating implant energy and dose may be chosen to form a vacancy-rich surface region beneath which the active silicon film is amorphised. In this configuration the surface region seeds SPE regrowth towards the back of the active layer during annealing. In bulk silicon the same implant conditions will typically produce a deep buried layer of 'zipper' defects with a band of interstitial-type 'end-of range' defects below it.
    • Detailed variants of this general concept are possible, for example in SOI, the vacancy-generating implant energy and dose may be chosen to form a vacancy-rich surface region beneath which the active silicon film is amorphised. In this configuration the surface region seeds SPE regrowth towards the back of the active layer during annealing. In bulk silicon the same implant conditions will typically produce a deep buried layer of 'zipper' defects with a band of interstitial-type 'end-of range' defects below it.
  • 11
    • 84901870046 scopus 로고    scopus 로고
    • paper in preparation
    • N. Bennett, paper in preparation
    • Bennett, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.