A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Superlattices and Microstructures

Volumn 86, Issue , 2015, Pages 1-19

  Ajayan, J ^a   Nirmal, D ^a  

^a KARUNYA UNIVERSITY   (India)

Author keywords

Bipolar transistors; Composite channel; HEMT; Hetero junction bipolar transistors (HBTs); InAs; InGaAs; InP; Noise figure (NF)

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; MOSFET DEVICES; NOISE FIGURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

COMPOSITE CHANNEL; FIBER OPTIC COMMUNICATIONS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH THERMAL CONDUCTIVITY; HIGH-FREQUENCY APPLICATIONS; HIGH-SPEED APPLICATIONS; INAS; INGAAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84937573484     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2015.06.048     Document Type: Review

References (265)

1. V. Radisic, K.M.K.H. Leong, S. Sarkozy, X. Mei, A 75 mW 210 GHz power amplifier module, in: Comp. Semi. Integrated Circuit Symp. (CSICS), October 2011, p. 1-4.
2. T.B. Reed, M. Rodwell, Z. Griffith, A 220 GHz InP HBT solid state power amplifier MMIC with 90 mW Pout at 8.2 dB compressed gain, in: Comp. Semi. Integrated Circuit Symp. (CSICS), October 2012, p. 1-4.
3. max of 400/350 GHz for heterogeneous integrated millimeter wave sources IEEE Trans. Elect. Dev. 90 7 2013 2209
4. L. Pfeiffer, and K.W. West The role of molecular beam epitaxy in recent quantum hall effect physics discoveries Physica E: Low-Dimensional Syst. Nanostruct. 57 2003
5. G.D. Wilk, R.M. Wallace, and J.M. Anthony High-κ gate dielectrics: current status and material properties considerations J. Appl. Phys. 89 10 May 2001 5243
6. W.K. Henson, and K.Z. Ahmed Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional C-V measurement on MOS capacitors IEEE Elect. Dev. Lett. 20 4 1999 179
7. M. Houssa High-κ Gate Dielectrics, Material Science and Engineering 2003 Institute of Physics Publishing ISBN-13, 978-0-7503-0906-6
8. B. Cheng, M. Cao, and R. Rao The impact of high-κ gate dielectric and metal gate electrodes on sub-100 nm MOSFETs IEEE Trans. Elect. Dev. 46 July 1999 1537
9. E.P. Gusev, D.A. Buchanan, E. Cartier, Ultra thin high-κ gate stacks for advanced CMOS devices, in: Proceedings of IEDM Tech. Dig., December 2001, p. 451.
10. S. Datta, G. Dewey, M. Doczy, High mobility Si/SiGe strained channel transistor with HfO/sub 2//TiN gate stack, in: Proceedings of IEDM Tech. Dig., December 2003, p. 653.
11. C.O. Chui, H. Kim, A sub-4000C germanium MOSFET technology with high-κ dielectric and metal gate, in: Proceedings of IEDM Tech. Dig., 2002, p. 437.
12. P.D. Ye Main determinants for III-V metal oxide semiconductor field effect transistors J. Vac. Sci. Technol. A 26 4 2008
13. G.E. Moore Cramming more components onto integrated circuits Electronics 38 8 1965
14. Process Integration, Devices and Structures, in ITRS, 2005, p. 11.
15. D. Nirmal Subthreshold performance of gate engineered FinFET devices and circuit with high-κ dielectrics Microelectron. Reliab. 53 3 2013 499
16. T. Mimura Status of the GaAs metal-oxide-semi-conductor technology IEEE Trans. Elect. Dev. 27 6 1980 1147
17. D.A.J. Moran, Sub-micron metal gate, high-κ dielectric, implant-free, enhancement mode III-V MOSFETs, in: Proceedings of Eur. Solid State Devices Res. Conf. Tech. Dig., 2007, p. 466.
18. 3 dielectric stack on GaAs J. Vac. Sci. Technol. B 23 2005 1773
19. R. Droopad, K. Rajagopalan, J.K. Abrokwah, and M. Passlack Gate dielectric on compound semiconductors by MBE J. Vac. Sci. Technol. B 24 2006 1479
20. D. Nirmal Subthreshold analysis of nanoscale FinFETs for ultra low power applications using high-κ materials Int. J. Electron., Taylor & Francis group 100 6 2013 803
21. N. Yang, W.K. Henson, and J. Wortman A comparative study of gate direct tunnelling and drain leakage currents in N-MOSFETs with sub-100 nm gate oxides IEEE Trans. Elect. Dev. 47 2000 1636
22. H. Zhao, A study of electrical and material characteristics of III-V MOSFETs and TFETs with high-κ gate dielectrics, Dissertation, The university of TEXAS at Austin, December 2010.
23. D. Nirmal Nano scale channel engineered double gate MOSFET for mixed signal application using high-κ dielectric Int. J. Circuit Theory Appl. 41 6 2013 608
24. K.J. Hubbard, and D.G. Schlom Thermodynamic stabilities of binary oxides in contact with silicon J. Mater. Res. 11 11 1996 2757
25. K. Rajagopalan 1-μm enhancement mode GaAs n-channel MOSFETs with transconductance exceeding 250 mS/mm IEEE Elect. Dev. Lett. 28 2 2007 100
26. R.W. Johnson, A. Hultqvist, and S.F. Bent A brief review of atomic layer deposition: from fundamentals to applications Mater. Today 17 5 2014 236
27. S.M. George Atomic layer deposition: an overview Chem. Rev. 110 2010 111
28. M. Knez, K. Neilsch, and L. Niinisto Synthesis and surface engineering of complex nano-structures by atomic layer deposition Adv. Mater. 19 2 2007 3425
29. M. Leskela Atomic layer deposition chemistry: recent developments and future challenges Chem. Int. Ed. 42 45 2003 5548
30. Riikka Puurunen Surface chemistry of atomic layer deposition: a case study for the trymethyl aluminium/water process J. Appl. Phys. 97 12 2005 121301-121301-52
31. V. Miikkulainen, and M. Leskela Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends J. Appl. Phys. 113 2 2013 101
32. H. Kim Atomic layer deposition of metal and nitride thin films: current research efforts and applications for semiconductor device processing J. Vac. Sci. Technol. B 21 6 2003 2231
33. M. Leskela, and M. Ritala Atomic layer deposition (ALD): from precursors to thin film structures Thin Solid Films 409 2002 138 Elsevier
34. J.A. Van Delft, and D.G. Alonso Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing Semiconductor Sci. Technol. 27 7 2012
35. T.J. Knisley, and L.C. Kalutarage Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films Coord. Chem. Rev. 257 23-24 2013 3222
36. J.R. Bekke, and K.L. Pickrahn Nano engineering and interfacial engineering of photovoltaics by atomic layer deposition Nano Scale 3 9 2011 3482
37. T. Suntola, J. Antson, Inventors, Method for Producing Compound Thin Films, Patent, 4058430, November 15, 1977.
38. M. Ritala, and J. Niinisto Chemical vapour deposition: precursors processes and applications Royal Soc. Chem. 2009 158
39. Y. Xuan, Y.Q. Wu, and P.D. Ye High performance inversion type enhancement mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm IEEE Elect. Dev. Lett. 29 4 2008 294
40. H. Zhao, Flexible plastic substrate ZnO thin film transistor circuits, in: IEEE Dev. Research Conf. DRC, June 2009, p. 177.
41. xAs channels for NFETs, in: Proceedings of IEDM Tech. Dig., December 2008, p. 363.
42. 3 gate dielectrics J. Vac. Sci. Technol. B 27 4 2009 2024
43. J.P. Desouza, E. Kiewra, and Y. Sun Inversion mode n-channel GaAs FETs with high-κ metal gate Appl. Phy. Lett. 92 15 2008 153508
44. 2, HfAlO as gate dielectrics, in: Proceedings of IEDM Tech. Dig., 2007, p. 637.
45. 2/AlN gate stack IEEE Elect. Dev. Lett. 29 6 2008 557
46. 2 and silicon interface passivation layer Appl. Phy. Lett. 92 20 2008 202903
47. H.C. Chin, and M. Zhu In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface channel GaAs MOSFETs IEEE Elect. Dev. Lett. 29 6 2008 553
48. 0.47As n-channel MOSFETs with HfAlO gate dielectric and TaN metal gate IEEE Elect. Dev. Lett. 29 9 2008 977
49. 2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm Appl. Phy. Lett. 92 22 2008 222904
50. J. Lin, S. Lee, Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self aligned gate-first process and HfO2/TaN gate stack, in: Proceedings of IEDM Tech. Dig., 2008, p. 401.
51. 0.25As MOSFET IEEE Elect. Dev. Lett. 30 7 2009 700
52. M. Passlack, High mobility III-V MOSFETs for RF and digital applications, in: Proceedings of IEDM Tech. Dig., 2007, p. 621.
53. 2/V.s, and transconductance of over 475 μS/μm IEEE Elect. Dev. Lett. 28 12 2007 1080
54. M. Hong III-V MOSFETs with high-κ dielectrics Jpn. J. Appl. Phy. 46 5B 2007 3167
55. 3) as gate dielectrics Appl. Phys. Lett. 93 3 2008 033 516
56. 3)/InGaAs enhancement mode n-channel MOSFETs IEEE Elect. Dev. Lett. 19 8 1998 309
57. S. Koveshnikov Metal oxide semiconductor capacitor on GaAs with high-κ gate oxide and amorphous silicon interface passivation layer Appl. Phys. Lett. 88 2 2006 022106
58. 2 and silicon interface passivation layer, in: Proceedings of IEDM Tech. Dig., December 2006, p. 829.
59. D.H. Kim Atomic layer deposition of insulating nitride, interfacial layers for Germanium MOSFETs with high-κ oxide/tungsten nitride gate stacks Appl. Phys. Lett. 90 May 2007 212104
60. H.C. Chin, New silane-ammonia surface passivation technology for realizing inversion type surface channel GaAs n-MOSFET with 160 nm gate length and high quality metal gate/high-κ dielectric stack, in: Proceedings of IEDM Tech. Dig., December 2008, p. 383.
61. H. Zhao Metal oxide semiconductor capacitors in GaAs with germanium nitride passivation layer Appl. Phys. Lett. 91 17 2007 172101
62. 3 gate dielectric Appl. Phy. Lett. 91 August 2007 063501
63. Y.Q. Wu, High performance deep sub micron inversion mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/μm, new HBr pretreatment and channel engineering, in: Proceedings of IEDM Tech. Dig., December 2009, p. 323.
64. H. Oh, Thermally robust phosphorous nitride interface passivation for InGaAS self aligned gate first n-MOSFET integrated with high-κ dielectric, in: Proceedings of IEDM Tech. Dig., 2009, p. 339.
65. 0.47As MOSFETs Appl. Phys. Lett. 96 25 2010 253502
66. 0.47As MOSFETs Appl. Phys. Lett. 96 10 2010 103506
67. 3, in: Proceedings of Device Research Conference (DRC), June 2007, p. 209.
68. 0.48As MOSFETs with high-κ gate dielectrics IEEE Elect. Dev. Lett. 28 6 2007 473
69. 2 inter layers Appl. Phys. Lett. 89 4 2006 042104
70. 2 gate dielectric, in: Proceedings of 64th Device Research Conference (DRC), 2006, p. 49.
71. 0.3 As buried channel MOSFETS, in: Proc. of IEDM Tech. Dig., 2008, p. 1-4.
72. 2/Vs using InP barrier layer Appl. Phys. Lett. 94 19 2009 193502
73. 0.3As MOSFET Appl. Phys. Lett. 96 10 2010 102101
74. M. Passlack Implant free high mobility flat band MOSFET: principle of operation IEEE Trans. Elect. Dev. 53 10 2006 2454
75. 3 as gate dielectric Appl. Phys. Lett. 91 21 2007 212101
76. T, in: IEEE Int. Conf. On Indium Phosphide & Related Materials, (IPRM), 2011.
77. D.H. Kim, 130 nm E-mode InAs pHEMTs for the THz and future logic applications, in: Proceedings of IEDM Tech. Dig., 2008, p. 719.
78. 3) as gate dielectrics, in: Proceedings of 66th Device Research Conference (DRC), 2008, p. 39.
79. 2 (EOT = 0.8 nm) composite insulator, in: Proceedings of IEDM Tech. Dig., 2012, p. 761.
80. 3 gate dielectric exhibiting maximum drain current exceeding 1.3 Ma/μm Appl. Phys. Exp. 4 5 2011 054201
81. M. Radosavljevic, Advanced high-κ gate dielectric for high performance short channel In0.7Ga0.3As quantum well field effect transistor on silicon substrate for low power logic applications, in: Proceedings of IEDM Tech. Dig., 2009, p. 319.
82. J. Robertson Band offsets of high-κ gate oxide on III-V semiconductors J. Appl. Phys. 100 1 2006 014111
83. S. Hyeon Self aligned Ni InGaAs as source/drain for InGaAs MOSFET Appl. Phys. Exp. 4 2011 024201
84. 0.47As quantum well MOSFET structures J. Appl. Phys. 111 2012 104511
85. 3/InGaAs hetero structure Appl. Phys. Lett. 89 2006 012903
86. 3 gate dielectric Appl. Phys. Lett. 91 2007 093509
87. 0.47As channel MOSFETs with reduced leakage using a vertical spacer Appl. Phys. Lett. 103 23 2013 233503
88. B. Yu, 15 nm gate length planar CMOS transistor, in: Proceedings of IEDM Tech. Dig., 2001, p. 937.
89. B. Doris, Extreme scaling with ultra thin silicon channel MOSFETs, in: Proc. of IEDM Tech. Dig., 2002, p. 267.
90. J.A. Del Alamo Nanometre electronics with III-V compound semiconductors Nature 479 7373 2011 317
91. Y. Liu Fundamentals of III-V Semiconductor MOSFETs 2010 Springer p. 31
92. R. Prasher Study of novel channel materials using III-V compounds with various gate dielectrics Int. J. Org. Electron. (IJOE) 2 1 2013 11
93. T. Ishibashi High Speed Hetero Structure Devices, Semiconductors and Semimetals vol. 41 1994 Academic Press San Diego 250
94. A. Yamada Ion implantation of isoelectronic impurities into InP Nucl. Instr. Meth. B 80-81 1993 910
95. F. Hartley The Chemistry of the Metal Carbon Bond 1982 Wiley New York pp. 53-71
96. + ion implanted GaAs Appl. Phys. Lett. 47 6 1985 623
97. Y. Makita Formation of radiative complex-centres by dual implantation of C+ and O+ ions into GaAs Nucl. Instr. Meth. B 15 1986 765
98. J. Mo, and E. Lind Asymmetric InGaAs/InP MOSFETs with source/drain engineering IEEE Elect. Dev. Lett. 35 5 2014 515
99. R.J. Malik Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament Appl. Phys. Lett. 53 26 1988 2661
100. M. Naganuma Ionized Zn doping of GaAs molecular beam epitaxial films Appl. Phys. Lett. 27 1975 342
101. T.J. De Lyon Lattice-contraction due to carbon doping of GaAs grown by metal organic MBE Appl. Phys. Lett. 56 1 1990 1040
102. J. Nagle A comparison of atomic carbon versus beryllium accepter doping in GaAs grown by MBE J. Crystal Growth 111 1991 264
103. M. Micovic Quantum well lasers with carbon doped cladding layers grown by solid source MBE Appl. Phys Lett. 64 4 1994 411
104. B. Lee Orientation dependent amphoteric behaviour of group IV impurities in the molecular beam epitaxial and vapour phase epitaxial growth of GaAs J. Crystal Growth 96 1989 27
105. E.F. Schubert Delta doping of III-V compound semiconductors: fundamentals and device applications J. Vac. Sci. Technol. A 8 3 1990 2980
106. S.J. Bass Silicon and germanium doping of epitaxial GaAs grown by trimethyl gallium arsenide method J. Crystal Growth 47 5 1979 613
107. + films of GaAs J. Electrochem. Soc. 118 10 1971 1645
108. C.E.C. Wood Complex free carrier profile synthesis by atomic plane doping of MBE GaAs J. Appl. Phys. 51 1 1980 383
109. H. Lee, Optimized GaAs/(Al, Ga)As modulation doped hetero-structures, in: Int. Symp. GaAs and related compounds, Institute of Physics, Bristol, 1984, p. 321.
110. E.F. Schubert Spatial localization of impurities in δ-doped GaAs Appl. Phys. Lett. 52 18 1988 1508
111. xAs Appl. Phys. Lett. 54 25 1989 2592
112. E.F. Schubert Beryllium δ-doping of GaAs grown by MBE J. Appl. Phys. 67 4 1990 1969
113. M. Santos Effect of substrate temperature on migration of Si in planar doped GaAs Appl. Phys. Lett. 53 25 1988 2504
114. C. Webb Silicon segregation in δ-doped GaAs, characterised by Auger electron spectroscopy Appl. Phys. Lett. 54 21 1989 2091
115. E.F. Schubert The delta doped field effect transistor Jap. J. Appl. Phys. 24 8 1985 L608
116. 2 for field effect transistors Appl. Phys. Lett. 51 15 1987 1170
117. V. Palankovski Study of dopant-dependent band gap narrowing in compound semiconductor devices Mater. Sci. Eng. B 66 1999 46
118. J.W. Slotboom Measurements of band gap narrowing in Si bipolar transistors Solid State Electron. 19 10 1976 857
119. D.B.M. Klassan Unified apparent band gap narrowing in n-and p-type silicon Solid State Electron. 35 5 1992 125
120. R.M. Sieg Band gap narrowing and the reconciliation of photoluminescence spectra with electrical measurements for epitaxial n-InP J. Appl. Phys. 80 1 1996 448
121. A. Katz, Indium phosphide related materials: processing, technology and devices, Artech House, Boston, MA, ISBM 10, 1992.
122. Z.H. Lu Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy Appl. Phys. Lett. 64 1 1994 88
123. B.R. Yan Study of band gap narrowing effect and nonradiative recombination centres for heavily doped GaAs by photoluminescence spectroscopy J. Appl. Phys. 77 9 1995 4822
124. Z. Shouli Considerations of dopant dependent band gap narrowing for accurate device simulation in abrupt HBTs J. Semiconductors 30 2009
125. R. Brian Growth of InP high electron mobility transistor structures with Te doping J. Crystal Growth 278 2005 596
126. 0.2GaAs modulation doped hetero-structures by MBE Appl. Phys. Lett. 66 7 1995 845
127. xSb layers Appl. Phys. Lett. 87 9 2005 092105-1
128. M. Blumina Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te as n-type dopant by low pressure MOCVD J. Appl. Phys. 75 1 1994 357
129. N. Hayafuji Thermal stability of AlInAs/GaInAs/InP heterosructures Appl. Phys. Lett. 66 7 1995 863
130. Y. Yamamoto Donor passivation in n-AlInAs layers by fluorine J. Electron. Mater. 25 4 1996 685
131. M. Tanabe The impact of using AlGaAs as a carrier supplying layer in an InAlAs/InGaAs HEMT structure on thermal stability Appl. Phys. Lett. 70 25 1997 3386
132. T. Kohara InAlAs/Pseudomorphic InGaAs/InP HEMT with doped InAs/AlAs super lattice Jap. J. Appl. Phys. 39 4A 2000 1683
133. T. Suemitsu Bias-stress induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs Microelectron. Reliab. 42 1 2002 47
134. C.D. Latham Density functional calculations of carbon doping in III-V compound semiconductors Phys. Rev. B 63 2001 155202
135. J.L. Benchimol Investigation of carbon doped base materials grown by CBE for Al-free InP HBTs J. Crystal Growth 209 2000 476
136. Mattias Dahlstrom, Ultra high speed InP HBTs, Doctoral Dissertation, Royal Institute of Technology, May 2003.
137. 0.47As HBTs Solid State Electron. 46 6 2002 867
138. J.C. Li Physical modelling of degeneratively doped compound semiconductors for high performance HBT design Solid State Electron. 50 2006 1440
139. R. Chau Bench marking nanotechnology for high performance and low power logic transistor applications IEEE Trans. Nanotechnol. 4 2 2005 153
140. 0.47As multiple gate field effect transistor with selectively regrown channels IEEE Elect. Dev. Lett. 35 3 2014 342
141. T.W. Kim, 60 nm Self aligned gate InGaAs HEMTs with record high frequency characteristics, in: Proceedings of IEDM Tech. Dig., December 2010, p. 30.7.1.
142. D.H. Kim, 30 nm E-Mode InAs PHEMTs for THz and future logic applications, in: Proceedings of IEDM Tech. Dig., 2008, p. 1-4.
143. 0.3As QW-FETs on silicon substrate for low power logic applications, in: Proceedings of IEDM Tech. Dig., 2009, p. 1-4.
144. H. Ko Ultra thin compound semiconductor on insulator layers for high performance nano scale transistors Nature 468 7321 2010 286
145. Y.Q. Wu, First experimental demonstration of 100 nm inversion mode InGaAs FinFET through damage free side wall etching, in: Proceedings of IEDM Tech. Dig., 2009, p. 331.
146. C. Thelander Vertical enhancement mode InAs nanowire FET with 50 nm wrap gate IEEE Elect. Dev. Lett. 29 3 2008 206
147. R.J. W. Hill, Self aligned III-V MOSFETs hetero integrated on a 200 mm Si substrate using an industry standard process flow, in: Proceedings of IEDM Tech. Dig., 2010, p. 6.2.1.
148. 0.47As channel MOSFETs with self aligned InAs source/drain formed by MEE regrowth IEEE Elect. Dev. Lett. 30 11 2009 1128
149. P. Nagaiah Mobility and remote scattering in buried InGaAs quantum well channel with high-κ gate oxide J. Vac. Sci. Technol. B 28 3 2010 C3H5
150. S. Oktyabrsky Electron scattering in buried InGaAs/ high-κ metal oxide semiconductor channels ECS Trans. 35 3 2011 385
151. 0.25As MOSFETs with ALD high-κ as gate dielectric, in: Proceedings of IEDM Tech. Dig., 2008, p. 371.
152. 0.25As MOSFETs Appl. Phys. Lett. 96 7 2010 072102
153. J.J. Gu III-V MOSFETs enabled by top-down nano wire released process: experiment and simulation Appl. Phys. Lett. 99 11 2011 112113
154. 3 on GaAs using trymethylaluminum and isopropanol precursors Appl. Phys. Lett. 93 2008 031902
155. 0.47As MOSFET, in: Proceedings of IEDM Tech. Dig., December 2011, p. 13.2.1.
156. 0.47As MOSFET IEEE Elect. Dev. Lett. 33 3 2012 369
157. 2 gate stack IEEE Elect. Dev. Lett. 36 3 2015 223
158. H. Uchiyama Strained epilayers effectively reduce plasma induced fluorine damage in P-HEMTs IEEE Trans. Dev. Mater. Reliab. 5 4 2005 706
159. 3 insulator Appl. Phys. Lett. 101 22 2012 223507
160. 2 insulator, in: Proceedings of IEDM Tech. Dig., 2012, p. 757.
161. N. Fujihara Thermally stable InAlAs/InGaAs hetero junction FET with AlAs/InAs super lattice insertion layer Electron. Lett. 32 11 1996 1039
162. J.A. Del Alamo Nanometer-scale electronics with III-V compound semiconductors Nature 479 2011 317
163. S.J. Pearton Dry etching of electronic oxides, polymers and semiconductors Plasma Process Polym. 2 2005 16
164. J. Lin A self aligned InGaAs quantum well MOSFET fabricated through a lift off free front end process Appl. Phys. Exp. 5 6 2012 064002
165. 0.3As quantum well MOSFETs with atomic layer deposited beryllium oxide as interfacial layer Appl. Phys. Lett. 104 16 2014 163502
166. F. Schwierz Semiconductor devices for RF applications: evolution and current status Microelectron. Reliab. 41 2001 145
167. DD = 0.5 V, in: Proceedings of IEDM Tech. Dig., 2014, p. 25.3.1.
168. 0.44 confinement layers Appl. Phys. Lett. 103 20 2013 203502
169. D.H. Kim, Logic performance of 40 nm InAs HEMTs, in: Proceedings of IEDM Tech. Dig., 2007, p. 629.
170. O. Esame Performance comparison of state of art HBT based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP Microelectron. J. 35 June 2004 901
171. K.W. Kabayashi InP based HBT technology for next generation light wave communication Microwave J. June 1998
172. D. Sawdai Power performance of InP based single and double HBTs IEEE Trans. Microwave Theory Tech. 47 8 1999 1449
173. T. Jenson Milli-metre wave hetero integrated sources in InP on BiCMOS technology Int. J. Microwave Wireless Tech. 6 3/4 2014 225
174. max over 300 GHz in a new manufacturable technology IEEE Elect. Dev. Lett. 25 8 2004 520
175. M. Hossain A 246 GHz hetero integrated frequency source in InP on BiCMOS technology IEEE Microwave Wireless Compon. Lett. 24 7 2014 469
176. 2 side wall spacers IEEE Trans. Elect. Dev. 61 10 2014 3423
177. max and low C/sub cb//I/sub C/ratio IEEE Elect. Dev. Lett. 25 5 2004 250
178. max/Spl 450 GHz IEEE Elect. Dev. Lett. 26 8 2005 530
179. max in InP/GaAsSb/InP DHBT with new base isolation μ-air bridge design IEEE Elect. Dev. Lett. 33 10 2012 1381
180. max > 1.1 THz, in: IEEE Dev. Research Conf. DRC, 2011, p. 281.
181. max = 340 GHz Appl. Phys. Lett. 87 December 2005 252109
182. V. Jain Transconductance degradation in near-THz InP DHBTs IEEE Elect. Dev. Lett. 32 8 2011 1068
183. J. Hacker, THz MMICs based on InP HBT technology, in: IEEE MTT-S Int. Microwave Symp. Dig., May 2010, p. 1126.
184. T = 360 GHz, in: IEEE Int. Conf. On Indium Phosphide & Related Materials, (IPRM), 2009, p. 16.
185. T, in: IEEE Int. Conf. On Indium Phosphide & Related Materials, (IPRM), 2007, p. 403.
186. T. Kraemer Travelling wave amplifiers in transferred substrate InP-HBt technology IEEE Trans. Microwave Theory Tech. 57 9 2009 2114
187. max over 400 GHz IEEE Trans. Elect. Dev. 56 9 2009 1897
188. max > 700 GHz Appl. Phys. Exp. 7 3 2014 034105
189. max = 450/510 GHz IEEE Elect. Dev. Lett. 34 1 2013 33
190. max = 428/621 GHz IEEE Elect. Dev. Lett. 34 8 2013 984
191. Y.J. Chuang Radio frequency noise characterization and modelling of type-II InP-GaAsSb DHBT IEEE Elect. Dev. Lett. 29 1 2008 21
192. R. Lovblom InP/GaAsSb DHBTs with 500 GHz maximum oscillation frequency IEEE Elect. Dev. Lett. 32 5 2011 629
193. M.W. Dvorak 300GHz InP/GaAsSb/InP DHBT with high current capability and BV/Sub CEO/ > 6 V IEEE Elect. Dev. Lett. 22 8 2001 361
194. C.R. Bogonesi, Ultra high performance staggered line up (type-II) InP/GaAsSb/InP NPN DHBTs, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2001, p. 27.
195. V. Nodjiadjim, 400 GHz fmax InP/GaAsSb HBT for millimetre wave applications, in: IEEE Int., Conf. on Indium Phosphide & Related Materials, (IPRM), 2010, p. 1-4.
196. T x BVCEO > 2.5 THz-V at room temperature, in: Proceedings of IEDM Tech. Dig., 2007, p. 667.
197. K.Y.D. Cheng Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP DHBTs Appl. Phys. Lett. 98 24 2011 242103
198. max > 400 GHz, in: Proceedings of IEDM Tech. Dig., 2007, p. 663.
199. D. Cohan Abrupt delta doped InP/GaInAs/InP DHBT With 0.45 micron wide T-shaped emitter contacts IEEE Elect. Dev. Lett. 29 9 2008
200. max Appl. Phys. Lett. 16 8 1995 357
201. xAs hetero junctions Jap. J. Appl. Phys. 19 5 1980 L225
202. R. Dimgle Electron mobilities in modulation doped semiconductor hetero junction super lattice Appl. Phys. Lett. 33 7 1978 665
203. xN hetero junctions Appl. Phys. Lett. 60 24 1992 3027
204. xN hetero junction Appl. Phys. Lett. 63 9 1993 1214
205. 0.52As hetero junctions grown by MBE Appl. Phys. Lett. 40 2 1982 147
206. 0.53As hetero junction field effect transistors IEEE Elect. Dev. Lett. 3 6 1982 152
207. Mark A. Wistey Control of InGaAs and InAs facets using metal modulation epitaxy J. Vac. Sci. Technol. B 33 1 2015 011208-1
208. M.Y. Kao, An extremely low noise InP-based HEMT with silicon nitride passivation, in: Proceedings of IEDM Tech. Dig., 1994, p. 907.
209. 0.47As gate stacks with low leakage and low interface trap densities J. Appl. Phys. 116 12 2014 124104
210. P.M. Smith, InP based HEMTs for microwave and millimetre-wave applications, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 1995, p. 68.
211. T.W. Kim, Logic characteristics of 40 nm thin channel InAs HEMTs, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2010, p. 496.
212. max greater than 1 THz, in: Proceedings of IEDM Tech. Dig., December 2007, p. 609.
213. max > 1THz, in: Proceedings of IEDM Tech. Dig., December 2010, p. 692.
214. T. Takahashi, Improvement in high frequency and noise characteristics of InP based HEMTs by reducing parasitic capacitance, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 2008, p. 1-4.
215. L.D. Nguyen 50-nm self aligned gate pseudomorphic AlInAs/GaInAs high electron mobility transistors IEEE Trans. Elect. Dev. 39 9 1992 2007
216. T. Enoki 0.05-μm gate InAlAs/InGaAs high electron mobility transistors and reduction of its short channel effects Jap. J. Appl. Phys. 33 1994 798
217. T. Suemitsu 30 nm gate InP based lattice matched high electron mobility transistors with 350 GHz cut off frequency Jap. J. Appl. Phys. 38 2B 1999 L154
218. T (>300 GHz) and their MMIC applications, in: Proc. of Gallium Arsenide & Other Semi. Appl. Symp., 2000, p. 252.
219. Y. Yamashita Ultra short 25-nm gate lattice matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency IEEE Elect. Dev. Lett. 22 8 2001 368
220. K. Shinohara Ultra high speed pseudomorphic InGaAs/InAlAs HEMTs with 400 GHz cut-off frequency IEEE Elect. Dev. Lett. 22 11 2001 507
221. T. Suemitsu Improved recessed gate structure for sub 0.1 μm - gate InP based high electron mobility transistors Jap. J. Appl. Phys. 37 38 1998 1365
222. T. Suemitsu 30-nm two-step recess gate InP based InAlAs/InGaAs HEMTs IEEE Trans. Elect. Dev. 49 10 2002 1694
223. T. Suemitsu High performance 0.1 μm gate enhancement mode InAlAs/InGaAs HEMT using a two-step recessed gate technology IEEE Trans. Elect. Dev. 46 6 1999 1074
224. C.Y. Chen, Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 1997, p. 509.
225. K.J. Chen High performance in InP based enhancement mode HEMTs using non-alloyed ohmic contacts and Pt based buried gate technologies IEEE Trans. Elect. Dev. 43 2 1996 252
226. A. Mahajan 0.3 μm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistors IEEE Elect. Dev. Lett. 18 6 1997 284
227. N. Harada, Pt-based gate enhancement mode InAlAs/InGaAs HEMTs for large scale integration, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 1997, p. 509.
228. D.H. Kim 30-nm InAs pseudomorphic HEMTs on InP substrate with a current gain cut-off frequency of 628GHz IEEE Elect. Dev. Lett. 29 8 2008 830
229. T. Takahashi Improvement of RF and noise characteristics using a cavity structure in InAlAs/InGaAs HEMTs IEEE Trans. Elect. Dev. 59 8 2012 2136
230. 0.25As metamorphic HEMTs with an ultra short 15-nm gate, in: Proceedings of IEDM Tech. Dig., 2007, p. 613.
231. T = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimetre wave applications, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2010, p. 137.
232. K. Shinohara, Nano gate InP-HEMT technology for ultra high speed performance, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2004, p. 721.
233. Y. Nakasha Ultra high speed and ultra low noise InP HEMTs FUJITSU Sci. Tech. J. 43 4 2007 486
234. max IEEE Elect. Dev. Lett. 15 11 1994 477
235. T. Suemitsu, 30 nm gate InAlAs/InGaAs HEMTs lattice matched to InP substrates, in: Proceedings of IEDM Tech. Dig., 1998, p. 223.
236. T 50-nm gate lattice matched InAlAs/InGaAs HEMTs, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2000, p. 87.
237. A. Endoh, Fabrication technology and device performance of sub 50-nm gate InP based HEMTs, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), 2001, p. 448.
238. 0.47As p-HEMTs IEEE Trans. Elect. Dev. 55 7 2008 1577
239. Xu. Dong 50-nm asymmetrically recessed metamorphic high electron mobility transistors with reduced source-drain spacing: performance enhancements and tradeoffs IEEE Trans. Elect. Dev. 59 1 2011 128
240. N. Harada Frequency divider using InAlAs/InGaAs HEMT DCFL-NOR gates Electron. Lett. 29 24 1993 2100
241. N. Harada, Pt-based gate enhancement mode InAlAs/InGaAs HEMTs for large scale integration, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), April 1991, p. 377.
242. Y. Yamashita Pseudomorphic In/Sub 0.52/Al/Sub 0.48/As/In/Sub 0.7/Ga/Sub 0.3/As HEMTs with an ultra high f/Sub T/ of 562 GHz IEEE Elect. Dev. Lett. 23 10 2002 573
243. -max > 2.7 mS/μm, in: Proceedings of IEDM Tech. Dig., 2011, p. 319.
244. J. Schleeh Ultra low power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz IEEE Elect. Dev. Lett. 33 5 2012 664
245. Y.C. Chou, Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 2005, p. 223.
246. M.W. Pospieszalski, Millimeter wave cryogenically coolable amplifiers using AlInAs/GaInAs/InP HEMTs, in: IEEE MTT-S Microwave Symp. Dig., June 1993, p. 515.
247. J. Schleeh Characterisation and modelling of cryogenic, ultra low-noise InP HEMTs IEEE Trans. Elect. Dev. 60 1 2012 206
248. W.R. Deal Terahertz monolithic integrated circuits using InP high electron mobility transistors IEEE Trans. THz Sci. Tech. 1 1 2011 25 32
249. 0.3As: HEMTs for beyond CMOS applications IEEE Trans. Elect. Dev. 54 10 2007 2606
250. max = 681 GHz IEEE Elect. Dev. Lett. 31 8 2010 806
251. H. Fukui Optimal noise figure of microwave GaAs MESFETs IEEE Trans. Elect. Dev. 26 7 1979 1032
252. Y.H. Kim Organic TFT array on a paper substrate IEEE Elect. Dev. Lett. 25 10 2004 702
253. J. Nathaniel Relaxed high quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation J. Appl. Phys. 102 2007 033511
254. Wei. Zhou Metamorphic hetero structure InP/GaAsSb/InP HBTs on GaAs substrate by MOCVD IEEE Elect. Dev. Lett. 28 7 2007 539
255. Haiou. Li Metamorphic AlInAs/GaInAs, HEMTs on GaAs substrates by MOCVD IEEE Elect. Dev. Lett. 29 6 2008 561
256. Li Yang Compositionally-graded InGaAs-InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs J. Crystal Growth 324 2011 103
257. S.W. Kim High performance 0.1-μm In/Sub 0.4/AlAs/In/Sub 0.35/GaAs MHEMTs with Ar plasma treatments IEEE Elect. Dev. Lett. 26 11 2005 787
258. Li Hai Ou Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition Chinese Phys. B 20 6 2011 068502
259. max of 520 GHz IEEE Elect. Dev. Lett. 28 8 2007 672
260. 0.5As metamorphic HEMT IEEE Trans. Elect. Dev. 53 3 2006 406
261. A. Leuther, Metamorphic 50-nm InAs channel HEMT, in: IEEE Int. Conf. on Indium Phosphide & Related Materials, (IPRM), May 2005, p. 129.
262. cc = 0.5 V) logic applications, in: Proceedings of IEDM Tech. Dig., 2008, p. 727.
263. S. Datta, 85 nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications, in: Proceedings of IEDM Tech. Dig., 2005, p. 763.
264. M. Zaknoune InAlAs/InGaas metamorphic HEMT with high current density and high breakdown voltage IEEE Elect. Dev. Lett. 19 9 1998 345
265. T. Ashley, High performance InSb based quantum well field effect transistors for low power dissipation applications, in: Proceedings of IEDM Tech. Dig., 2009, p. 849.