SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 22, 2012, Pages

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O 3 insulator

(14) Kim, D H a Del Alamo, J A b Antoniadis, D A b Li, J c Kuo, J M c Pinsukanjana, P c Kao, Y C c Chen, P a Papavasiliou, A a King, C a Regan, E a Urteaga, M a Brar, B a Kim, T W d

a TELEDYNE SCIENTIFIC COMPANY (United States)

b Massachusetts Institute of Technology (United States)

c Intelligent Epitaxy Technology (United States)

d SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT-MODE; EX SITU; HIGH FREQUENCY PERFORMANCE; III-V MOSFET; INP; MAXIMUM TRANSCONDUCTANCE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; ON-RESISTANCE; SUB-100 NM;

ATOMIC LAYER DEPOSITION; DISPLAY DEVICES; GALLIUM;

MOSFET DEVICES;

EID: 84870555996 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4769230 Document Type: Article

Times cited : (28)

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