Electron scattering in buried InGaAs/High-k MOS channels

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 385-395

  Oktyabrsky, S ^a   Veksler, D ^b   Nagaiah, P ^a   Chidambaram, T ^a   Tokranov, V ^a   Yakimov, M ^a   Kambhampati, R ^a   Chen, Y T ^b   Bersuker, G ^b   Goel, N ^b   Hobbs, C ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; COULOMB SCATTERING; HALL CONCENTRATION; HALL MEASUREMENTS; HIGH-K GATE OXIDE; INALAS/INGAAS/INP; INTERFACE TRAP DENSITY; LOW CARRIER DENSITY; MOBILITY BEHAVIOR; MODULATION-DOPED; MOSFET STRUCTURES; QUANTUM WELL; ROOM TEMPERATURE; SHEET DENSITY; THERMAL-ANNEALING;

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRON ENERGY LOSS SPECTROSCOPY; GATE DIELECTRICS; GRAPHENE; HALL EFFECT; HALL MOBILITY; NANOWIRES;

CARRIER MOBILITY;

EID: 79960807072     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3569931     Document Type: Conference Paper

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