InP/GaAsSb DHBTs with simultaneous fT/fMAX=428/621 GHz

IEEE Electron Device Letters

Volumn 34, Issue 8, 2013, Pages 984-986

  Lövblom, Rickard ^a   Flückiger, Ralf ^a   Alexandrova, Maria ^a   Ostinelli, Olivier ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Double heterojunction bipolar transistors (DHBTs); InP GaAsSb; maximum oscillation frequency (fMAX); millimeter wave transistors

Indexed keywords

COMMON EMITTER; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER DEVICES; HEAVILY DOPED; INP; MAXIMUM OSCILLATION FREQUENCY; MILLIMETER-WAVE TRANSISTORS; PEAK CURRENTS;

SEMICONDUCTING GALLIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84881028766     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2269711     Document Type: Article

References (14)

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